Low Voltage Dual N Channel Power Transistor MATSUKI ME4946 for Battery Powered Circuit Solutions
Key Attributes
Model Number:
ME4946
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6.4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
33mΩ@10V,5.3A
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
33pF@30V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.1nF@30V
Pd - Power Dissipation:
2.7W
Gate Charge(Qg):
13.3nC@5V
Mfr. Part #:
ME4946
Package:
SOP-8
Product Description
Product Overview
The ME4946 is a Dual N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low power loss in a compact surface-mount package.
Product Attributes
- Brand: DCC
- Product Series: ME4946/ME4946-G
- Certifications: Pb-free (ME4946), Green product-Halogen free (ME4946-G)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| STATIC | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 60 | V | ||
| Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.8 | 3.0 | V | |
| Gate Leakage Current | VDS=0V, VGS=20V | 100 | nA | |||
| Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | 1 | A | |||
| Zero Gate Voltage Drain Current (Tj=55) | VDS=60V, VGS=0V | 10 | A | |||
| Drain-Source On-Resistance | VGS=10V, ID= 5.3A | 33 | 41 | m | ||
| Drain-Source On-Resistance | VGS=4.5V, ID= 4.7A | 40 | 52 | m | ||
| Diode Forward Voltage | IS=2A | 0.8 | 1.2 | V | ||
| DYNAMIC | Input capacitance | VDS=30V, VGS=0V, f=1.0MHz | 940 | 1100 | pF | |
| Output Capacitance | 71 | pF | ||||
| Reverse Transfer Capacitance | 33 | pF | ||||
| Total Gate Charge | VDS=30V, VGS=10V, ID=5.3A | 22 | 29 | nC | ||
| DYNAMIC | Gate-Source Charge | VDS=30V, VGS=5V, ID=5.3A | 13.3 | 18 | nC | |
| Gate-Drain Charge | 7.1 | |||||
| DYNAMIC | Gate Resistance | f=1MHz | 0.9 | |||
| Turn-On Delay Time | VDD=30V, RL =6.8 ID=4.4A, VGEN=10V RG=1 | 14 | 18 | ns | ||
| DYNAMIC | Turn-On Rise Time | VDD=30V, RL =6.8 ID=4.4A, VGEN=10V RG=1 | 26 | 33 | ns | |
| Turn-Off Delay Time | VDD=30V, RL =6.8 ID=4.4A, VGEN=10V RG=1 | 41 | 52 | ns | ||
| DYNAMIC | Turn-Off Fall Time | VDD=30V, RL =6.8 ID=4.4A, VGEN=10V RG=1 | 3.6 | 6 | ns | |
| Turn-On Delay Time | VDD=30V, RL =6.8 ID=4.4A, VGEN=4.5V RG=1 | 12 | 16 | ns | ||
| DYNAMIC | Turn-On Rise Time | VDD=30V, RL =6.8 ID=4.4A, VGEN=4.5V RG=1 | 26 | 33 | ns | |
| Turn-Off Delay Time | VDD=30V, RL =6.8 ID=4.4A, VGEN=4.5V RG=1 | 42 | 52 | ns | ||
| DYNAMIC | Turn-Off Fall Time | VDD=30V, RL =6.8 ID=4.4A, VGEN=4.5V RG=1 | 3.8 | 7 | ns | |
| Absolute Maximum Ratings | Drain-Source Voltage | 60 | V | |||
| Gate-Source Voltage | 20 | V | ||||
| Continuous Drain Current(Tj=150) | TA=25 | 6.4 | A | |||
| Continuous Drain Current(Tj=150) | TA=70 | 5.1 | A | |||
| Pulsed Drain Current | 30 | A | ||||
| Absolute Maximum Ratings | Continuous Source-Drain Diode Current | 5 | A | |||
| Avalanche Current (L=0.1mH) | 15 | A | ||||
| Single-Pulse Avalanche Energy | 12 | mJ | ||||
| Absolute Maximum Ratings | Maximum Power Dissipation | TA=25 | 2.7 | W | ||
| Maximum Power Dissipation | TA=70 | 1.7 | W | |||
| Operating Junction & Storage Temperature Range | -55 | 150 | ||||
| Thermal Resistance | Junction to Ambient | * | 46 | 76 | /W | |
| Junction to Case | * | 43 | /W |
2411220407_MATSUKI-ME4946_C709723.pdf
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