Power Field Effect Transistor MATSUKI ME2604-G N Channel Logic Enhancement Mode for Power Management
Key Attributes
Model Number:
ME2604-G
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
900mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
10pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.17nF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
ME2604-G
Package:
SOT-223-3
Product Description
Product Overview
The ME2604 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is designed for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.
Product Attributes
- Brand: ME (implied by product name)
- Product Variants: ME2604 (Pb-free), ME2604-G (Green product-Halogen free)
- Package Type: SOT-223
- Certifications: Pb-free, Halogen free (for ME2604-G)
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Drain-Source Voltage | VDSS | 250 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current | ID | 0.9 | A | TA=25 |
| Continuous Drain Current | ID | 0.7 | A | TA=70 |
| Pulsed Drain Current | IDM | 3.6 | A | |
| Maximum Power Dissipation | PD | 2.2 | W | TA=25 |
| Maximum Power Dissipation | PD | 1.4 | W | TA=70 |
| Operating Junction Temperature | TJ | 150 | ||
| Storage Temperature Range | Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient* | RJA | 57 | /W | *Device mounted on 1in² FR4 board with 2 oz copper |
| Drain-Source Breakdown Voltage | BVDSS | 250 | V | VGS=0V, ID=250µA |
| Gate Threshold Voltage | VGS(th) | 1.5 - 3.5 | V | VDS=VGS, ID=250µA |
| Gate-Body Leakage | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=250V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 1.4 - 1.7 | Ω | VGS=10V, ID=1A |
| Drain-Source On-Resistance | RDS(ON) | 1.45 - 1.9 | Ω | VGS=4.5V, ID=1A |
| Diode Forward Voltage | VSD | 0.8 - 1.2 | V | ISD=1A, VGS=0V |
| Total Gate Charge | Qg | 30 | nC | VDS=200V, VGS=10V, ID=1.5A |
| Gate-Source Charge | Qgs | 17 | nC | VDS=200V, VGS=4.5V, ID=1.5A |
| Gate-Drain Charge | Qgd | 3 | nC | VDS=200V, VGS=4.5V, ID=1.5A |
| Input Capacitance | Ciss | 1170 | pF | VDS=15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 360 | pF | VDS=15V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 10 | pF | VDS=15V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 19 | ns | VDD=125V, RL=125Ω, RG=6Ω, VGEN=10V |
| Turn-On Rise Time | tr | 4 | ns | VDD=125V, RL=125Ω, RG=6Ω, VGEN=10V |
| Turn-Off Delay Time | td(off) | 48 | ns | VDD=125V, RL=125Ω, RG=6Ω, VGEN=10V |
| Turn-Off Fall Time | tf | 13 | ns | VDD=125V, RL=125Ω, RG=6Ω, VGEN=10V |
2410121643_MATSUKI-ME2604-G_C704953.pdf
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