N channel power MOSFET MASPOWER MS3N100HGD0 with 1000V drain source voltage and 3A continuous current
Key Attributes
Model Number:
MS3N100HGD0
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
3A
RDS(on):
5.2Ω@10V,1A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
5V
Reverse Transfer Capacitance (Crss@Vds):
5.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
390pF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
12nC
Mfr. Part #:
MS3N100HGD0
Package:
TO-252
Product Description
Product Overview
The MS3N100HGC0/D0/T1/D1/T0 is an N-channel power MOSFET designed for switching applications. It features low gate charge (typical 12nC), low Crss (typical 5.5pF), 100% avalanche tested, fast switching, and improved dv/dt capability. This device offers a high drain-source voltage of 1000V and a continuous drain current of 3A.
Product Attributes
- Brand: Maspower
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Marking | Package | VDS (V) | RDS(on) () | ID (A) | EAS (mJ) | PD (W) | TJ (C) |
| MS3N100HGC0 | MS3N100HGC0 | TO-247 | 1000 | 5.2 - 5.8 | 3 | 300 | 272 | -55 to 175 |
| MS3N100HGD0 | MS3N100HGD0 | TO-252 | 1000 | 5.2 - 5.8 | 3 | 300 | 50 | -55 to 175 |
| MS3N100HGT1 | MS3N100HGT1 | TO-220F | 1000 | 5.2 - 5.8 | 3 | 300 | 74 | -55 to 175 |
| MS3N100HGD1 | MS3N100HGD1 | TO-251 | 1000 | 5.2 - 5.8 | 3 | 300 | 50 | -55 to 175 |
| MS3N100HGT0 | MS3N100HGT0 | TO-220 | 1000 | 5.2 - 5.8 | 3 | 300 | 60 | -55 to 175 |
Electrical Characteristics (TCASE=25 unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | ID=1mA, VGS=0 | 1000 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=Max rating | - | - | 1 | A |
| TC=125 | - | - | 100 | A | ||
| Gate body leakage current | IGSS | VGS=30V | - | - | 100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=100A | 3.0 | 4.0 | 5.0 | V |
| Static drain-source on resistance | RDS(on) | VGS=10V, ID=1A | - | 5.2 | 5.8 | |
| Forward transconductance | gfs | VDS = 15 V, ID = 1.75A | - | 3 | - | S |
| Input capacitance | Ciss | VDS=25V,f=1MHz,V GS=0 | - | 390 | 500 | pF |
| Output capacitance | Coss | - | 45 | 60 | pF | |
| Reverse transfer capacitance | Crss | - | 5.5 | 7.0 | pF | |
| Total gate charge | Qg | VDD=800V,ID=3A, VGS=10V | - | 12 | 15 | nC |
| Gate-source charge | Qgs | - | 2.8 | - | nC | |
| Gate-drain charge | Qgd | - | 6.1 | - | nC | |
| Turn-on delay time | td(on) | VDD = 500V, ID =3A, RG = 25 , VGS = 10 V | - | 15 | 40 | ns |
| Rise time | tr | - | 35 | 80 | ns | |
| Turn-off-delay time | td(off) | - | 20 | 50 | ns | |
| Fall time | tf | - | 30 | 70 | ns |
Source Drain Diode
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Source Drain Current | ISD | - | - | - | 3 | A |
| Source Drain Current(Pulsed) | ISDM | - | - | - | 12 | A |
| Forward On Voltage | VSD | ISD=3A,VGS=0V | - | - | 1.2 | V |
| Reverse Recovery Time | Trr | ISD=3A,di/dt=100A/ S | - | 400 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=3A,di/dt=100A/ S | - | 1.6 | - | C |
Thermal Data
| Parameter | Symbol | Value | Unit |
| Thermal resistance junction max(TO-247) | Rthj-case | 0.46 | /W |
| Thermal resistance junction max(TO-252/TO-251) | Rthj-case | 2.5 | /W |
| Thermal resistance junction max(TO-220F) | Rthj-case | 1.69 | /W |
| Thermal resistance junction max(TO-220) | Rthj-case | 4.2 | /W |
2411271633_MASPOWER-MS3N100HGD0_C5353709.pdf
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