Durable MASPOWER MS20N50FS MOSFET Suitable for Electronic Transformers and Switch Mode Supplies
Key Attributes
Model Number:
MS20N50FS
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
200mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
260pF
Input Capacitance(Ciss):
2.85nF
Pd - Power Dissipation:
31.7W
Gate Charge(Qg):
48.7nC@10V
Mfr. Part #:
MS20N50FS
Package:
TO-220F
Product Description
Product Overview
The MS20N50FB/FC/FS/FT is a high-performance power MOSFET designed for demanding applications. It features low on-resistance, fast switching speeds, and high input resistance, making it ideal for electronic ballasts, electronic transformers, and switch-mode power supplies. This RoHS compliant component offers reliable performance with excellent thermal characteristics.
Product Attributes
- Brand: Maspower
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | MS20N50FB\FC\FT (TO-3PB\TO-247\TO-220) | MS20N50FS (TO-220F) | Unit | Conditions | |
| Drain-Source Voltage | VDSS | 500 | 500 | V | Tc=25 | |
| T=100 | ||||||
| Drain Current -continuous | ID | 20* | 15 | A | T=25 | |
| Drain Current -pulse | IDM | 80 | 80 | A | (note 1) | |
| Gate-Source Voltage | VGSS | 30 | 30 | V | ||
| Single Pulsed Avalanche Energy | EAS | 1000 | 1000 | mJ | (note 2) | |
| Power Dissipation | PD | 290 | 31.7 | W | TC=25 | |
| 2.17 | 0.25 | W/ | ||||
| Storage Temperature | TSTG | -55~+150 | -55~+150 | |||
| Junction Temperature | Tj | 150 | 150 | |||
| Off-Characteristics | ||||||
| Drain-Source Voltage Breakdown Voltage Temperature Coefficient | BVDSS /TJ | -0.6 | -0.6 | V/ | ID=250A, referenced to 25 | |
| Drain cut-off current | IDSS | 1 | 1 | A | VDS=500V,VGS=0V | |
| Drain cut-off current | IDSS | 10 | 10 | A | VDS=400V,Tj=125 | |
| Gate-body leakage current,forward | IGSSF | 100 | 100 | nA | VDS=0V,VGS=30V | |
| Gate-body leakage current,reverse | IGSSR | -100 | -100 | nA | VDS=0V,VGS=-30V | |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | 2.0 - 4.0 | V | VDS=VGS,ID=250uA | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.2 - 0.25 | 0.2 - 0.25 | VGS=10V,ID=12A (note 3) | ||
| Forward Transconductance | gfs | 19.7 | 19.7 | S | VDS =40V , ID=9.5A (note 3) | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | 2850 - 3900 | 2850 - 3900 | pF | VDS=25V, VGS=0V, f=1.0MHZ | |
| Output capacitance | Coss | 260 - 355 | 260 - 355 | pF | ||
| Reverse transfer capacitance | Crss | 7 - 23 | 7 - 23 | pF | ||
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | 30 - 92 | 30 - 92 | ns | VDD=250V,ID=20A, RG=25 VGS=10V(note 4,5) | |
| Turn-On rise time | tr | 43 - 170 | 43 - 170 | ns | ||
| Turn-Off delay time | td(off) | 110 - 265 | 110 - 265 | ns | ||
| Turn-Off Fall time | tf | 50 - 122 | 50 - 122 | ns | ||
| Total Gate Charge | Qg | 48.7 - 59.3 | 48.7 - 59.3 | nC | VDS=400V, ID=20A, VGS=10V(note4,5) | |
| Gate-Source charge | Qgs | 9.5 | 9.5 | nC | ||
| Gate-Drain charge | Qg d | 20.6 | 20.6 | nC | ||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Drain-Source Diode Forward Voltage | VSD | - - 1.4 | - - 1.4 | V | VGS=0V,IS=20A (note 3) | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - - 20 | - - 20 | A | ||
| Reverse recovery time | trr | - 400 - | - 400 - | ns | VGS=0V,IF=20A dIF/dt=100A/us(note 3) | |
| Reverse recovery charge | Qrr | - 4.2 - | - 4.2 - | uC | ||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.43 | 3.94 | /W | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 40 | 80 | /W | ||
2411271633_MASPOWER-MS20N50FS_C5353704.pdf
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