600 volt 30 amp soft recovery rectifier MICROCHIP APT30D60BG designed to minimize EMI noise and switching losses
Key Attributes
Model Number:
APT30D60BG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
320A
Reverse Leakage Current (Ir):
250uA@600V
Reverse Recovery Time (trr):
85ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - Forward(Vf@If):
1.8V@30A
Current - Rectified:
30A
Mfr. Part #:
APT30D60BG
Package:
TO-247-2
Product Description
Product Overview
The APT30D60BG is a 600 V, 30 A Fast Soft Recovery Rectifier Silicon Diode designed for high-reliability applications. It features fast recovery times, soft recovery characteristics, low forward voltage, and low leakage current, contributing to reduced switching losses, lower EMI noise, cooler operation, and increased system power density. This RoHS-compliant device is ideal for power factor correction, anti-parallel diode applications in switch-mode power supplies and inverters, freewheeling diode applications in motor controllers and inverters/converters, and as a snubber diode.
Product Attributes
- Brand: Microsemi
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
|---|---|---|---|---|
| Maximum DC reverse voltage | VR | 600 | V | |
| Maximum peak repetitive reverse voltage | VRRM | V | ||
| Maximum working peak reverse voltage | VRWM | V | ||
| Maximum average forward current | IF(AV) | 30 | A | (TC = 140 C, duty cycle = 0.5) |
| Non-repetitive forward surge current | IFSM | 320 | A | (TJ = 45 C, 8.3 ms) |
| Forward voltage | VF | 1.8 | V | IF = 30 A |
| Forward voltage | VF | 1.9 | V | IF = 60 A |
| Forward voltage | VF | 1.4 | V | IF = 30 A, TJ = 125 C |
| Maximum reverse leakage current | IRM | 250 | A | VR = VR rated |
| Maximum reverse leakage current | IRM | 500 | A | VR = VR rated, TJ = 125 C |
| Junction capacitance | CJ | 44 | pF | VR = 200 V |
| Reverse recovery time | trr | 23 | ns | IF = 1 A, diF/dt = 100 A/s, VR = 30 V |
| Reverse recovery time | trr | 85 | ns | IF = 30 A, diF/dt = 200 A/s, VR = 400 V |
| Reverse recovery charge | Qrr | 130 | nC | IF = 30 A, diF/dt = 200 A/s, VR = 400 V |
| Maximum reverse recovery current | IRRM | 4 | A | |
| Reverse recovery time | trr | 160 | ns | IF = 30 A, diF/dt = 200 A/s, VR = 400 V, TJ = 125 C |
| Reverse recovery charge | Qrr | 700 | nC | IF = 30 A, diF/dt = 200 A/s, VR = 400 V, TJ = 125 C |
| Maximum reverse recovery current | IRRM | 8 | A | |
| Reverse recovery time | trr | 70 | ns | IF = 30 A, diF/dt = 1000 A/s, VR = 400 V, TJ = 125 C |
| Reverse recovery charge | Qrr | 1300 | nC | IF = 30 A, diF/dt = 1000 A/s, VR = 400 V, TJ = 125 C |
| Maximum reverse recovery current | IRRM | 30 | A | |
| Junction-to-case thermal resistance | RJC | 0.67 | C/W | |
| Junction-to-ambient thermal resistance | RJA | 40 | C/W | |
| Operating and storage temperature range | TJ, TSTG | -55 to 175 | C | |
| Lead temperature for 10 seconds | TL | 300 | C | |
| Package weight | Wt | 6.2 | g | |
| Mounting torque, 6-32 or M3 screw | 1.1 | Nm |
2410122008_MICROCHIP-APT30D60BG_C5444776.pdf
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