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quality Small Signal Complementary Transistor Pair MCC MMDT3946-TP NPN and PNP in Halogen Free SOT-363 Package factory
quality Small Signal Complementary Transistor Pair MCC MMDT3946-TP NPN and PNP in Halogen Free SOT-363 Package factory

Small Signal Complementary Transistor Pair MCC MMDT3946-TP NPN and PNP in Halogen Free SOT-363 Package

Key Attributes
Model Number: MMDT3946-TP
Product Custom Attributes
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMDT3946-TP
Package:
SOT-363
Product Description

Product Overview

The MMDT3946 is a complementary pair of NPN and PNP small signal surface mount transistors, ideal for low power amplification and switching applications. Featuring epitaxial planar die construction and a SOT-363 package, these devices are Halogen Free, "Green", Moisture Sensitivity Level 1, and RoHS Compliant.

Product Attributes

  • Brand: MCCSEMI
  • Package: SOT-363
  • Construction: Epitaxial Planar Die
  • Certifications: Halogen Free. Green Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter Symbol NPN Rating NPN Unit NPN Conditions PNP Rating PNP Unit PNP Conditions
Power Dissipation PD 200 mW 200 mW
Thermal Resistance Junction to Ambient RJA 625 C/W 625 C/W
Collector-Emitter Voltage VCEO 40 V -40 V
Emitter-Base Voltage VEBO -5 V -5 V
Collector-Base Voltage VCBO -40 V -60 V
Continuous Collector Current IC -200 mA 200 mA
Collector Cutoff Current ICEO / ICBO 50 / 50 nA VCE=40V, IB=0 / VCB=30V, IE=0 -50 / -50 nA VEB=5V, IC=0 / VCB=-30V, IE=0
Emitter Cutoff Current IEBO 50 nA VEB=5V, IC=0 -50 nA VEB=-5V, IC=0
DC Current Gain hFE 40 (1), 70 (2), 100-300 (3), 60 (4), 30 (5) IC=1mA, IB=0 / IC=1mA, IB=0 / IC=10mA, IB=1mA / IC=20mA, IB=1mA / IC=50mA, IB=5mA 40 (1), 70 (2), 100-300 (3), 60 (4), 30 (5) IC=-0.1mA, IB=0 / IC=-1mA, IB=0 / IC=-10mA, IB=-1mA / IC=-20mA, IB=-1mA / IC=-50mA, IB=-5mA
Collector-Emitter Saturation Voltage VCE(sat) 0.2 (typ) / 0.3 (typ) V VCE=1V, IC=1mA / VCE=1V, IC=10mA -0.25 (typ) / -0.4 (typ) V VCE=-1V, IC=-10mA / VCE=-1V, IC=-50mA
Base-Emitter Saturation Voltage VBE(sat) 0.65-0.85 (typ) / 0.95 (typ) V IC=10mA, IB=1mA / IC=50mA, IB=5mA -0.65 -0.85 (typ) / -0.95 (typ) V IC=-10mA, IB=-1mA / IC=-50mA, IB=-5mA
Transition Frequency fT 300 MHz VCE=20V, IC=20mA, f=100MHz 250 MHz VCE=-20V, IC=-10mA, f=100MHz
Delay Time td 35 ns VCC=3V, IC=10mA, VBE=0.5V, IB1=1mA 35 ns VCC=-3V, IC=-10mA, VBE=-0.5V, IB1=-1mA
Rise Time tr 35 ns VCC=3V, IC=10mA, IB1=IB2=1mA 35 ns VCC=-3V, IC=-10mA, IB1=IB2=-1mA
Storage Time ts 50 ns VCB=5V, IE=0, f=1MHz 225 ns VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
Fall Time tf 0.95 V VCE=1V, IC=50mA 75 ns VCE=-1V, IC=-50mA
Output Capacitance Cob 4 pF VCE=1V, IC=0.1mA, f=1KHz 4.5 pF VCB=-5V, IE=0, f=1MHz
Noise Figure NF 3 dB VCE=5V,IC=0.1mA,f=1KHz,Rs=1K 4 dB VCE=-5V,IC=-0.1mA,f=1KHz,Rs=1K
Collector-Base Breakdown Voltage V(BR)CBO 60 V IC=10A, IE=0 -40 V IC=-10A, IE=0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=1mA, IB=0 -40 V IC=-1mA, IB=0
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10A, IC=0 -6 V IE=-10A, IC=0

2409302330_MCC-MMDT3946-TP_C2975571.pdf

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