High Voltage MOS Power Transistor MASPOWER MS5N100 with Excellent Avalanche Energy Handling Capacity
Key Attributes
Model Number:
MS5N100
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3pF
Number:
1 N-channel
Output Capacitance(Coss):
59pF
Pd - Power Dissipation:
74W
Input Capacitance(Ciss):
506pF
Gate Charge(Qg):
18.68nC@10V
Mfr. Part #:
MS5N100
Package:
TO-3PH
Product Description
Product Overview
The MS5N100/S/FT/FE/FD is a Planar Process N-channel 1000V MOS power transistor. It features extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This device is suitable for switching applications.
Product Attributes
- Brand: Maspower
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | TO-3PH | TO-220F | TO-252 | TO-220/TO-263 | Unit | |
| Electrical ratings (Absolute maximum ratings) | |||||||
| Drain-source voltage (VGS=0) | VDS | 1000 | V | ||||
| Gate-source voltage | VGS | 30 | V | ||||
| Avalanche current repetitive or not-repetitive (pulse width limited by Tj Max) | IAR | 5 | A | ||||
| Single pulse avalanche energy (starting Tj=25, Id=Iar, Vdd=50V) | EAS | 583 | mJ | ||||
| Drain current (continuous) at TC=25 | ID | 5 | A | ||||
| Drain current (continuous) at TC=100 | ID | 3 | A | ||||
| Drain current (pulsed) | IDM | 18 | 18 | 18 | 18 | A | |
| Total dissipation at TC=25 | PD | 74 | 48 | 104 | 198 | W | |
| Operating junction temperature | TJ | -55 to 150 | |||||
| Storage temperature | TSTG | ||||||
| Maximum lead temperature for soldering purpose | TL | 300 | |||||
| Electrical Characteristics (Tj=25 unless otherwise specified) | |||||||
| Drain-source breakdown voltage | V(BR)DSS | ID=1mA, VGS=0 | 1000 | V | |||
| Zero gate voltage drain current (VGS=0) | IDSS | VDS=Max rating | 1 | A | |||
| TC=125 | 50 | A | |||||
| Gate body leakage current (VGS=0) | IGSS | VGS=20V | 100 | nA | |||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.25 | 3 | 3.75 | V | |
| Static drain-source on resistance | RDS(on) | VGS=10V, ID=1A | 3.5 | 4.2 | |||
| Forward transconductance | gfs | VDS = 27 V, ID = 5A | 5.6 | S | |||
| Dynamic | |||||||
| Input capacitance | Ciss | VDS=25V,f=1MHz,VGS=0 | 506 | pF | |||
| Output capacitance | Coss | 59 | pF | ||||
| Reverse transfer capacitance | Crss | 3 | pF | ||||
| Charge | |||||||
| Total gate charge | Qg | VDD=800V, ID=2.5A, VGS=10V, RG = 4.7 | 18.68 | nC | |||
| Gate-source charge | Qgs | 2.1 | |||||
| Gate-drain charge | Qgd | 7.3 | |||||
| Switching times | |||||||
| Turn-on delay time | td(on) | VDD = 800 V, ID = 2.5 A, RG = 25, VGS = 10 V | 35.6 | ns | |||
| Rise time | tr | 22.9 | ns | ||||
| Turn-off-delay time | td(off) | 42.7 | ns | ||||
| Fall time | tf | 13.6 | ns | ||||
| Source Drain Diode | |||||||
| Source Drain Current | ISD | 5 | A | ||||
| Source Drain Current(Pulsed) | ISDM | 18 | A | ||||
| Forward On Voltage | VSD | ISD=5A,VGS=0V | 0.8 | 1.2 | V | ||
| Reverse Recovery Time | Trr | ISD=5A, di/dt=200A/S | 1.02 | us | |||
| Reverse Recovery Charge | Qrr | VR=100V,Tj=150 | 3.68 | uC | |||
| Thermal data | |||||||
| Thermal resistance junction max | Rthj-case | 1.69 | 2.6 | 1.2 | 0.63 | /W | |
| Thermal resistance junction-ambient max | Rtha-case | 47.4 | 58 | 68 | 35 | /W | |
Order Codes
| Partnumber | Marking | Package |
| MS5N100 | MS5N100 | TO-3PH |
| MS5N100S | MS5N100S | TO-220F |
| MS5N100FT | MS5N100FT | TO-220 |
| MS5N100FE | MS5N100FE | TO-263/D2PAK |
| MS5N100FD | MS5N100FD | TO-252/DPAK |
2411261919_MASPOWER-MS5N100_C5139244.pdf
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