PNP transistor MCC MMDT3906V-TP with plastic encapsulation epoxy UL 94 V0 rating and amplification

Key Attributes
Model Number: MMDT3906V-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMDT3906V-TP
Package:
SOT-563
Product Description

Product Overview

The MMDT3906V is a PNP plastic encapsulated transistor designed for low power amplification and switching applications. It features a lead-free finish and is RoHS compliant, with a moisture sensitivity level of 1 and an epoxy flammability rating of UL 94 V-0. The device offers a wide operating and storage temperature range from -55 to +150 and has a typical thermal resistance of 833/W (Junction to Ambient).

Product Attributes

  • Brand: MCCSEMI
  • Marking: KAR
  • Lead Free Finish/RoHS Compliant
  • Moisture Sensitivity Level: 1
  • Epoxy Meets UL 94 V-0 Flammability Rating
  • Halogen Free Available Upon Request (By Adding Suffix "-HF")

Technical Specifications

ParameterSymbolMinTypMaxUnitConditions
DC Current GainhFE(1)60VCE=-1V, IC=-0.1mA
hFE(2)80VCE=-1V, IC=-0.1mA
hFE(3)100300VCE=-1V, IC=-1mA
hFE(4)60VCE=-1V, IC=-50mA
hFE(5)30VCE=-1V, IC=-100mA
Collector-Emitter Saturation VoltageVCE(sat)-0.25VIC=-10mA, IB=-1mA
VCE(sat)-0.4VIC=-50mA, IB=-5mA
Base-Emitter Saturation VoltageVBE(sat)-0.65-0.85VIC=-10mA, IB=-1mA
VBE(sat)-0.95VIC=-50mA, IB=-5mA
Base Cutoff CurrentIBL-50nAIE=-10A, IC=0
Collector Cutoff CurrentICEX-50nAVCE=-30V, VEB(OFF)=-3V
Emitter-Base Breakdown VoltageV(BR)EBO-5VIC=-10A, IE=0
Collector-Emitter Breakdown VoltageV(BR)CEO-40VIC=-1mA, IB=0
Collector-Base Breakdown VoltageV(BR)CBO-40VIC=-1mA, IB=0
Transition FrequencyfT250MHzIC=-10mA, IB=-1mA
Output CapacitanceCob4.5pFVCB=-5V, IE=0, f=1MHz
Noise FigureNF4dBVCE=-5V, IC=-0.1mA RS=1K, f=1KHz
Switching TimesDelay Timetd35nsVCC=-3V, IC=-10mA VBE(OFF)=-0.5V, IB1=IB2=-1mA
Rise Timetr35nsVCC=-3V, IC=-10mA VBE(OFF)=-0.5V, IB1=IB2=-1mA
Storage Timets225nsVCC=-3V, IC=-10mA IB1=IB2=-1mA
Fall Timetf75nsVCC=-3V, IC=-10mA IB1=IB2=-1mA

2410010230_MCC-MMDT3906V-TP_C721437.pdf

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