power MOSFET MASPOWER MS40N15JDD0 150V 40A rating low on resistance and avalanche tested for UPS systems
Key Attributes
Model Number:
MS40N15JDD0
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
40A
RDS(on):
29mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V
Reverse Transfer Capacitance (Crss@Vds):
41pF
Output Capacitance(Coss):
153pF
Pd - Power Dissipation:
78W
Input Capacitance(Ciss):
2.447nF
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
MS40N15JDD0
Package:
TO-252
Product Description
Product Overview
The MS40N15JDD0 H1.02 from Maspower is a high-efficiency N-channel MOSFET designed for demanding power applications. It features a 150V/40A rating with a low on-resistance of 29m (typ.) at VGS=10V, low Crss (41pF typ.), and is 100% avalanche tested for enhanced reliability and ruggedness. This RoHS-compliant product is ideal for high-efficiency switch mode power supplies and electronic lamp ballasts based on half-bridge configurations, as well as UPS systems.
Product Attributes
- Brand: Maspower
- Model: MS40N15JDD0 H1.02
- Certifications: RoHS product
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Type | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 150 | V | |||
| Transient Gate-Source Voltage | VGSM | 30 | V | |||
| Continuous Gate-Source Voltage | VGSS | 20 | V | |||
| Drain Current -continuous | ID | T=25 | 40 | A | ||
| T=100 | 28 | A | ||||
| Drain Current - pulse (note1) | IDM | 140 | A | |||
| Single Pulsed Avalanche Energynote 2 | EAS | 283.5 | mJ | |||
| Power Dissipation | PD | TC=25 | 78 | W | ||
| TC=100 | 31 | W | ||||
| Operating and Storage Temperature Range | Tj,TSTG | -55 | +150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Electrical Characteristics (TCASE=25 unless otherwise specified) | ||||||
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250uA,VGS=0V | 150 | - | - | V |
| Drain cut-off current | IDSS | VDS=150V,VGS=0V | - | - | 1 | A |
| VDS=150V,Tj=125 | - | - | 50 | |||
| Gate-body leakage current | IGSS | VDS=0V,VGS=20V | - | - | 100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 3.0 | 3.8 | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=20A (note3) | - | 29 | 35 | m |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz (Note 4) | - | 2447 | - | pF |
| Output capacitance | Coss | - | 153 | - | pF | |
| Reverse transfer capacitance | Crss | - | 41 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=100V,ID=20A, RG=2.5VGS=10V | - | 28 | - | ns |
| Turn-On rise time | tr | - | 30 | - | ns | |
| Turn-Off delay time | td(off) | - | 95 | - | ns | |
| Turn-Off Fall time | tf | - | 40 | - | ns | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=100V, ID=20A, VGS=10V(note 4) | - | 56 | - | nC |
| Gate-Source charge | Qgs | - | 12 | - | nC | |
| Gate-Drain charge | Qg | - | 18 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=10A (note3) | - | 0.83 | 1.3 | V |
| Diode Forward Current | IS | - | - | 40 | A | |
| Reverse recovery time | trr | VGS=0V,IF=40A dIF/dt=100A/us | - | 48 | - | ns |
| Reverse recovery charge | Qrr | - | 78 | - | nC | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case,Max | RJC | 1.6 | /W | |||
| Thermal Resistance, Junction-to-Ambient,Max | RJA | 110 | /W | |||
2508261540_MASPOWER-MS40N15JDD0_C50726508.pdf
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