High voltage N channel MOSFET MASPOWER MS10N100HCT1 with 1000V drain source voltage and 10A current
Product Overview
The MS10N100HCT1(T0) is a high-performance N-channel MOSFET designed for switching applications. It features a VDS of 1000V and an ID of 10A, with low Crss, low gate charge, and improved dv/dt capability, making it suitable for demanding power electronics designs.
Product Attributes
- Brand: Maspower
- Model: MS10N100HCT1(T0)
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Type | Max | Unit | TO-220F | TO-220 |
| Absolute Ratings | ||||||||
| Drain-Source Voltage | VDSS | 1000 | V | |||||
| Transient Gate-Source Voltage | VGSM | ±30 | V | |||||
| Continuous Gate-Source Voltage | VGSS | ±20 | V | |||||
| Drain Current-continuous | ID | TC=25 | 10 | A | ||||
| Drain Current-continuous | ID | TC=100 | 6.7 | A | ||||
| Drain Current-pulse(1) | IDM | 40 | A | |||||
| Max current during repetitive or single pulse avalanche(1) | IAR | 6 | A | |||||
| Single Pulsed Avalanche Energy(2) | EAS | 360 | mJ | |||||
| Maximum Power Dissipation | PD | TC=25 | 36 | W | ✔ | |||
| Maximum Power Dissipation | PD | TC=100 | 14 | W | ✔ | |||
| Maximum Power Dissipation | PD | TC=25 | 183 | W | ✔ | |||
| Maximum Power Dissipation | PD | TC=100 | 73 | W | ✔ | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | ~ | +150 | ||||
| Soldering temperature, wave soldering only allowed at leads.(1.6mm for 10s) | TL | 260 | ||||||
| Electrical Characteristics | ||||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A,VGS=0V | 1000 | - | - | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS, VGS=0V, Tc=25 | - | - | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS, VGS=0V, Tc=125 | - | - | 100 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 3 | 4.1 | 5 | V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=3A | - | 0.96 | 1.30 | Ω | ||
| Forward Transconductance | gfs | VDS=40V,ID=3A | - | 10 | - | S | ||
| Dynamic Characteristics | ||||||||
| Input capacitance | Ciss | VDS=100V, VGS=0V, f=1.0MHz(4) | - | 440 | - | pF | ||
| Output capacitance | Coss | - | 30 | - | pF | |||
| Reverse transfer capacitance | Crss | - | 1.5 | - | pF | |||
| Switching-Characteristics | ||||||||
| Turn-On delay time | td(on) | VDS=500V,ID=6A, VGS=10V,RG=25Ω | - | 15 | - | ns | ||
| Turn-On rise time | tr | - | 12 | - | ns | |||
| Turn-Off delay time | td(Off) | - | 31 | - | ns | |||
| Turn-Off rise time | tf | - | 20 | - | ns | |||
| Total Gate Charge | Qg | VDS=500V,ID=6A, VGS=10V(4) | - | 15 | - | nC | ||
| Gate-Source charge | Qgs | - | 4 | - | nC | |||
| Gate-Drain charge | Qg d | - | 8 | - | nC | |||
| Drain-Source Diode Characteristics | ||||||||
| Maximum Continuous Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=1A | - | 0.76 | 1.2 | V | ||
| Diode Forward Current | IS | - | - | 10 | A | |||
| Reverse recovery time | Trr | IS=6A,diF/dt=100A/µs VR=100V,VGS=0V | - | 332 | - | ns | ||
| Reverse recovery charge | Qrr | - | 3700 | - | nC | |||
| Reverse recovery current | Irr | - | 19 | - | A | |||
| Thermal Characteristics | ||||||||
| Thermal Resistance,junction to Case,Max | Rth(j-C) | 3.4 | °C/W | ✔ | ||||
| Thermal Resistance,junction to Case,Max | Rth(j-C) | 0.68 | °C/W | ✔ | ||||
| Thermal Resistance,junction to Ambient,Max | Rth(j-A) | 63.5 | °C/W | ✔ | ||||
| Thermal Resistance,junction to Ambient,Max | Rth(j-A) | 52 | °C/W | ✔ | ||||
| Order Information | ||||||||
| Order codes | Package | Packaging | ||||||
| MS10N100HCT1 | T0-220F | Tube | ✔ | |||||
| MS10N100HCT0 | T0-220 | Tube | ✔ | |||||
2508261540_MASPOWER-MS10N100HCT1_C50726501.pdf
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