High voltage N channel MOSFET MASPOWER MS10N100HCT1 with 1000V drain source voltage and 10A current

Key Attributes
Model Number: MS10N100HCT1
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
10A
RDS(on):
960mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.1V
Reverse Transfer Capacitance (Crss@Vds):
1.5pF
Input Capacitance(Ciss):
440pF
Pd - Power Dissipation:
36W
Output Capacitance(Coss):
30pF
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
MS10N100HCT1
Package:
TO-220F
Product Description

Product Overview

The MS10N100HCT1(T0) is a high-performance N-channel MOSFET designed for switching applications. It features a VDS of 1000V and an ID of 10A, with low Crss, low gate charge, and improved dv/dt capability, making it suitable for demanding power electronics designs.

Product Attributes

  • Brand: Maspower
  • Model: MS10N100HCT1(T0)

Technical Specifications

ParameterSymbolTests conditionsMinTypeMaxUnitTO-220FTO-220
Absolute Ratings
Drain-Source VoltageVDSS1000V
Transient Gate-Source VoltageVGSM±30V
Continuous Gate-Source VoltageVGSS±20V
Drain Current-continuousIDTC=2510A
Drain Current-continuousIDTC=1006.7A
Drain Current-pulse(1)IDM40A
Max current during repetitive or single pulse avalanche(1)IAR6A
Single Pulsed Avalanche Energy(2)EAS360mJ
Maximum Power DissipationPDTC=2536W
Maximum Power DissipationPDTC=10014W
Maximum Power DissipationPDTC=25183W
Maximum Power DissipationPDTC=10073W
Operating and Storage Temperature RangeTJ,TSTG-55~+150
Soldering temperature, wave soldering only allowed at leads.(1.6mm for 10s)TL260
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSID=250A,VGS=0V1000--V
Zero Gate Voltage Drain CurrentIDSSVDS=VDSS, VGS=0V, Tc=25--1µA
Zero Gate Voltage Drain CurrentIDSSVDS=VDSS, VGS=0V, Tc=125--100µA
Gate-Body Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Gate Threshold VoltageVGS(th)VDS=VGS,ID=250µA34.15V
Static Drain-Source On-ResistanceRDS(ON)VGS=10V,ID=3A-0.961.30Ω
Forward TransconductancegfsVDS=40V,ID=3A-10-S
Dynamic Characteristics
Input capacitanceCissVDS=100V, VGS=0V, f=1.0MHz(4)-440-pF
Output capacitanceCoss-30-pF
Reverse transfer capacitanceCrss-1.5-pF
Switching-Characteristics
Turn-On delay timetd(on)VDS=500V,ID=6A, VGS=10V,RG=25Ω-15-ns
Turn-On rise timetr-12-ns
Turn-Off delay timetd(Off)-31-ns
Turn-Off rise timetf-20-ns
Total Gate ChargeQgVDS=500V,ID=6A, VGS=10V(4)-15-nC
Gate-Source chargeQgs-4-nC
Gate-Drain chargeQg d-8-nC
Drain-Source Diode Characteristics
Maximum Continuous Drain-Source Diode Forward VoltageVSDVGS=0V,IS=1A-0.761.2V
Diode Forward CurrentIS--10A
Reverse recovery timeTrrIS=6A,diF/dt=100A/µs VR=100V,VGS=0V-332-ns
Reverse recovery chargeQrr-3700-nC
Reverse recovery currentIrr-19-A
Thermal Characteristics
Thermal Resistance,junction to Case,MaxRth(j-C)3.4°C/W
Thermal Resistance,junction to Case,MaxRth(j-C)0.68°C/W
Thermal Resistance,junction to Ambient,MaxRth(j-A)63.5°C/W
Thermal Resistance,junction to Ambient,MaxRth(j-A)52°C/W
Order Information
Order codesPackagePackaging
MS10N100HCT1T0-220FTube
MS10N100HCT0T0-220Tube

2508261540_MASPOWER-MS10N100HCT1_C50726501.pdf

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