Power management transistor MATSUKI ME15N10 G N channel logic enhancement mode field effect transistor
Key Attributes
Model Number:
ME15N10-G
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
14.7A
Operating Temperature -:
-
RDS(on):
100mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
57pF
Pd - Power Dissipation:
34.7W
Gate Charge(Qg):
-
Mfr. Part #:
ME15N10-G
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The ME15N10 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phone power management, notebook computer power management, and other battery-powered circuits. It offers low in-line power loss within a very small outline surface mount package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ME15N10), Green product-Halogen free (ME15N10-G)
Technical Specifications
| Parameter | Symbol | Maximum Ratings (TC=25 Unless Otherwise Noted) | Unit | Limit | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | VDS | Drain-Source Voltage | V | 100 | |||
| VGS | Gate-Source Voltage | V | 20 | ||||
| ID | Continuous Drain Current (TC=25) | A | 14.7 | ||||
| Continuous Drain Current (TC=70) | 13.6 | ||||||
| IDM | Pulsed Drain Current | A | 59 | ||||
| PD | Maximum Power Dissipation (TC=25) | W | 34.7 | ||||
| Thermal Resistance | TJ, Tstg | Junction and Storage Temperature Range | -55 to 150 | ||||
| RJC | Thermal Resistance-Junction to Case * | /W | 3.6 | ||||
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | V | 100 | |||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=250A) | V | 1 | 3 | |||
| IGSS | Gate Leakage Current (VDS=0V, VGS=20V) | nA | 100 | ||||
| IDSS | Zero Gate Voltage Drain Current (VDS=80V, VGS=0V) | A | 1 | ||||
| RDS(ON) | Drain-Source On-Resistance (VGS=10V, ID=8A) | m | 80 | 100 | |||
| VSD | Diode Forward Voltage (IS=8A, VGS=0V) | V | 0.9 | 1.2 | |||
| Qg | Total Gate Charge (VDS=80V, VGS=10V, ID=10A) | nC | 24 | ||||
| Qg | Total Gate Charge (VDS=80V, VGS=4.5V, ID=10A) | nC | 13 | ||||
| Qgs | Gate-Source Charge | nC | 4.6 | ||||
| Qgd | Gate-Drain Charge | nC | 7.6 | ||||
| Dynamic Characteristics | Ciss | Input Capacitance (VDS=15V, VGS=0V,f=1MHz) | pF | 882 | |||
| Coss | Output Capacitance | pF | 57 | ||||
| Crss | Reverse Transfer Capacitance | pF | 44 | ||||
| td(on) | Turn-On Delay Time (VDS=50V, RL =5, VGS=10V, RG=1 ID=1A) | ns | 14 | ||||
| tr | Turn-On Rise Time | ns | 33 | ||||
| Switching Characteristics | td(off) | Turn-Off Delay Time | ns | 39 | |||
| tf | Turn-Off Fall Time | ns | |||||
2410121643_MATSUKI-ME15N10-G_C147781.pdf
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