Surface Mount Power MOSFET MATSUKI ME4894-G N Channel with Low On Resistance and High Current
Key Attributes
Model Number:
ME4894-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
40pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
820pF@30V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
-
Mfr. Part #:
ME4894-G
Package:
SOP-8
Product Description
Product Overview
The ME4894-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include extremely low RDS(ON) due to a super high-density cell design and exceptional DC current capability.
Product Attributes
- Brand: ME (implied by product name ME4894/ME4894-G)
- Origin: Matsuki Electric/Force Mos (implied by 'Matsuki Electric/ Force mos reserves the right to improve product design')
- Color: Not specified
- Certifications: Pb-free (ME4894), Green product- Halogen free (ME4894-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 30 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current* TA=25 | ID | 12 | A | * The device mounted on 1in² FR4 board with 2 oz copper |
| Continuous Drain Current* TA=70 | ID | 9.5 | A | * The device mounted on 1in² FR4 board with 2 oz copper |
| Pulsed Drain Current | IDM | 48 | A | |
| Maximum Power Dissipation* TA=25 | PD | 2.5 | W | * The device mounted on 1in² FR4 board with 2 oz copper |
| Maximum Power Dissipation* TA=70 | PD | 1.6 | W | * The device mounted on 1in² FR4 board with 2 oz copper |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient* | RθJA | 50 | /W | * The device mounted on 1in² FR4 board with 2 oz copper |
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA |
| Gate Threshold Voltage | VGS(th) | 1 to 3 | V | VDS=VGS, ID=250μA |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V |
| Drain-Source On-State Resistance | RDS(ON) | 8.5 to 11 | mΩ | VGS=10V, ID=11A |
| Drain-Source On-State Resistance | RDS(ON) | 14 to 17.5 | mΩ | VGS=4.5V, ID=8.8A |
| Diode Forward Voltage | VSD | 0.8 to 1.2 | V | IS=8.8A, VGS=0V |
| Dynamic Characteristics (TJ =25 Noted) | ||||
| Total Gate Charge(10V) | Qg | 21 | nC | VDS=15V, VGS=10V, ID=8.8A |
| Total Gate Charge(4.5V) | Qg | 11 | nC | VDS=15V, VGS=4.5V, ID=8.8A |
| Gate-Source Charge | Qgs | 4 | nC | |
| Gate-Drain Charge | Qgd | 4.4 | nC | |
| Input capacitance | Ciss | 820 | pF | VDS=30V, VGS=0V, f=1.0MHz |
| Output Capacitance | Coss | 130 | pF | |
| Reverse Transfer Capacitance | Crss | 40 | pF | |
| Gate-Resistance | Rg | 1.2 | Ω | VDS=0V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 23 | ns | VDD=15V, RL =15Ω, ID=1A, VGEN=4.5V, RG=1.8Ω |
| Turn-On Rise Time | tr | 19 | ns | |
| Turn-Off Delay Time | td(off) | 41 | ns | |
| Turn-Off Fall Time | tf | 10 | ns | |
2410121643_MATSUKI-ME4894-G_C709742.pdf
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