1200 Volt Silicon Carbide MOSFET Microchip MSC080SMA120B for Switching in PV Inverters and Motor Drives
Key Attributes
Model Number:
MSC080SMA120B
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
100mΩ
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.2pF
Input Capacitance(Ciss):
1.1nF
Output Capacitance(Coss):
91pF
Pd - Power Dissipation:
231W
Gate Charge(Qg):
72nC
Mfr. Part #:
MSC080SMA120B
Package:
TO-247
Product Description
Product Overview
The Microchip MSC080SMA120B is a 1200 V, 80 m SiC N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications. Leveraging silicon carbide technology, it offers advantages over traditional silicon MOSFETs and IGBTs, including high efficiency, faster switching speeds, and improved thermal capabilities. This device is suitable for demanding applications such as PV inverters, industrial motor drives, smart grid infrastructure, and electric vehicle powertrains.
Product Attributes
- Brand: Microchip
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameter | Ratings | Unit | Min | Typ | Max |
| VDSS | Drain source voltage | 1200 | V | |||
| ID | Continuous drain current at TC = 25 C | 40 | A | |||
| ID | Continuous drain current at TC = 100 C | 28 | A | |||
| IDM | Pulsed drain current1 | 91 | A | |||
| VGS | Gate-source voltage | 23 to 10 | V | |||
| PD | Total power dissipation at TC = 25 C | 231 | W | |||
| Linear derating factor | 1.54 | W/C | ||||
| RJC | Junction-to-case thermal resistance | C/W | 0.50 | 0.65 | ||
| TJ | Operating junction temperature | 55 to 175 | C | |||
| TSTG | Storage temperature | 55 to 150 | C | |||
| TL | Lead temperature for 10 seconds | 300 | C | |||
| Mounting torque, 6-32 or M3 screw | lbf-in / N-m | 10 | 1.1 | |||
| Wt | Package weight | oz / g | 0.22 | 6.2 | ||
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | |||
| RDS(on) | Drain-source on resistance1 | 80 | m | 100 | ||
| VGS(th) | Gate-source threshold voltage | 1.9 | V | 2.8 | ||
| VGS(th)/ TJ | Threshold voltage coefficient | mV/C | -4.5 | |||
| IDSS | Zero gate voltage drain current | 100 | A | |||
| IDSS | Zero gate voltage drain current, TJ = 125 C | 500 | A | |||
| IGSS | Gate-source leakage current | 100 | nA | |||
| Ciss | Input capacitance | 1100 | pF | |||
| Crss | Reverse transfer capacitance | 6.2 | pF | |||
| Coss | Output capacitance | 91 | pF | |||
| Qg | Total gate charge | 72 | nC | |||
| Qgs | Gate-source charge | nC | 12 | |||
| Qgd | Gate-drain charge | nC | 19 | |||
| td(on) | Turn-on delay time | 21 | ns | |||
| tr | Voltage rise time | 10 | ns | |||
| td(off) | Turn-off delay time | 19 | ns | |||
| tf | Voltage fall time | 16 | ns | |||
| Eon | Turn-on switching energy | 362 | J | |||
| Eoff | Turn-off switching energy | 68 | J | |||
| ESR | Gate equivalent series resistance | 1.9 | ||||
| SCWT | Short circuit withstand time | 3 | s | |||
| EAS | Avalanche energy, single pulse | 1000 | mJ | |||
| VSD | Diode forward voltage | 4.0 | V | |||
| VSD | Diode forward voltage | 4.2 | V | |||
| trr | Reverse recovery time | 28 | ns | |||
| Qrr | Reverse recovery charge | 367 | nC | |||
| IRRM | Reverse recovery current | 12 | A |
2410122007_MICROCHIP-MSC080SMA120B_C5127757.pdf
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