N Channel Vertical DMOS FET MICROCHIP DN1509N8 G with high input impedance and low input capacitance
Key Attributes
Model Number:
DN1509N8-G
Product Custom Attributes
Drain To Source Voltage:
90V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@0V,200mA
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
150pF
Pd - Power Dissipation:
1.62W
Mfr. Part #:
DN1509N8-G
Package:
SOT-89
Product Description
Product Overview
The DN1509 is a low threshold, depletion-mode, normally-on N-Channel Vertical DMOS FET. It features high input impedance, low input capacitance, fast switching speeds, and low on-resistance, making it suitable for a variety of switching and amplifying applications. Its advanced vertical DMOS structure offers power-handling capabilities comparable to bipolar transistors while retaining the advantages of MOS devices, such as freedom from thermal runaway and thermally-induced secondary breakdown.
Product Attributes
- Brand: Microchip Technology Inc.
- Origin: Silicon-gate manufacturing process
- Certifications: Pb-free (JEDEC designator for Matte Tin (Sn))
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
|---|---|---|---|---|---|---|
| DC Parameters | ||||||
| Drain-to-source breakdown voltage | BVDSX | 90 | - | - | V | VGS = -5V, ID = 1.0A |
| Gate-to-source off voltage | VGS(OFF) | -1.8 | - | -3.5 | V | ID = 10A |
| VGS(OFF) change with temperature | VGS(OFF) | - | - | -4.5 | mV/C | VDS = 15V, ID= 10A (Note 2) |
| Gate body leakage | IGSS | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| Drain-to-source leakage current | ID(OFF) | - | - | 1.0 | A | VDS = BVDSX, VGS = -5.0V |
| VDS = 0.8 BVDSX, VGS = -5.0V, TA= 125C (Note 2) | ||||||
| Saturated drain-to-source current | IDSS | 300 | 540 | - | mA | VGS = 0V, VDS = 25V |
| Static drain-to-source on-state resistance | RDS(ON) | - | 3.2 | 6.0 | VGS = 0V, ID= 200mA | |
| Change in RDS(ON) with temperature | RDS(ON) | - | - | 1.1 | %/C | VGS = 0V, ID= 200mA (Note 2) |
| AC Parameters | ||||||
| Forward transconductance | GFS | 200 | - | - | mmho | VDS = 10V, ID= 200mA |
| Input capacitance | CISS | 70 | 150 | - | pF | VGS = -10V, VDS = 25V, f = 1MHz |
| Common source output capacitance | COSS | - | 20 | 40 | pF | VGS = -10V, VDS = 25V, f = 1MHz |
| Reverse transfer capacitance | CRSS | - | 6.0 | 15 | pF | VGS = -10V, VDS = 25V, f = 1MHz |
| Turn-on delay time | td(ON) | - | 12 | 30 | ns | VDD = 25V, ID = 100mA, RGEN = 25 |
| Rise time | tr | - | 16 | 45 | ns | VDD = 25V, ID = 100mA, RGEN = 25 |
| Turn-off delay time | td(OFF) | - | 15 | 45 | ns | VDD = 25V, ID = 100mA, RGEN = 25 |
| Fall time | tf | - | 25 | 60 | ns | VDD = 25V, ID = 100mA, RGEN = 25 |
| Diode Parameters | ||||||
| Diode forward voltage drop | VSD | - | - | 1.8 | V | VGS = -5.0V, ISD= 500mA (Note 1) |
| Reverse recovery time | trr | - | 400 | - | ns | VGS = -5.0V, ISD= 500mA (Note 2) |
2410121950_MICROCHIP-DN1509N8-G_C616345.pdf
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