700 Volt Silicon Carbide MOSFET MICROCHIP MSC035SMA070B4 with Low Capacitance and High Current Rating
Key Attributes
Model Number:
MSC035SMA070B4
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
77A
Operating Temperature -:
-55℃~+175℃
RDS(on):
44mΩ
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Input Capacitance(Ciss):
2.01nF
Output Capacitance(Coss):
247pF
Pd - Power Dissipation:
283W
Gate Charge(Qg):
99nC
Mfr. Part #:
MSC035SMA070B4
Package:
TO-247-4L
Product Description
Product Overview
The Microsemi MSC035SMA070B4 is a 700 V, 35 m Silicon Carbide (SiC) N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications compared to traditional silicon solutions. It features low capacitances, fast switching speeds, stable operation at high junction temperatures (up to 175 C), a reliable body diode, and superior avalanche ruggedness. This device offers high efficiency, enabling lighter and more compact systems, and is easy to drive and parallel. It eliminates the need for an external freewheeling diode, contributing to lower system costs.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Package: TO-247
- Certification: RoHS compliant
Technical Specifications
| Parameter | Symbol | Unit | Rating | Test Conditions |
| Absolute Maximum Ratings | ||||
| Drain source voltage | VDSS | V | 700 | |
| Continuous drain current at TC = 25 C | ID | A | 77 | |
| Continuous drain current at TC = 100 C | ID | A | 54 | |
| Pulsed drain current | IDM | A | 192 | 1 |
| Gate-source voltage | VGS | V | 23 | |
| Total power dissipation at TC = 25 C | PD | W | 283 | |
| Linear derating factor | W/C | 1.9 | ||
| Thermal and Mechanical Characteristics | ||||
| Junction-to-case thermal resistance | RJC | C/W | 0.53 | Max |
| Operating junction temperature | TJ | C | 175 | Max |
| Storage temperature | TSTG | C | 150 | Max |
| Soldering temperature for 10 seconds (1.6 mm from case) | TL | C | 260 | |
| Mounting torque, 6-32 or M3 screw | N-m | 1.1 | Max | |
| Package weight | Wt | g | 6.2 | Typ |
| Static Characteristics | ||||
| Drain-source breakdown voltage | V(BR)DSS | V | 700 | VGS = 0 V, ID = 100 A |
| Drain-source on resistance | RDS(on) | m | 35 | VGS = 20 V, ID = 30 A, Typ |
| Gate-source threshold voltage | VGS(th) | V | 1.9 | VGS = VDS, ID = 2 mA, Typ |
| Threshold voltage coefficient | VGS(th)/TJ | mV/C | 4.7 | VGS = VDS, ID = 2 mA, Typ |
| Zero gate voltage drain current | IDSS | A | 100 | VDS = 700 V, VGS = 0 V, Typ |
| Zero gate voltage drain current at TJ = 125 C | IDSS | nA | 100 | VDS = 700 V, VGS = 0 V, Typ |
| Gate-source leakage current | IGSS | nA | 100 | VGS = 20 V, Typ |
| Gate-source leakage current | IGSS | nA | 100 | VGS = 10 V, Typ |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | pF | 2010 | VGS = 0 V, VDD = 700 V, Typ |
| Reverse transfer capacitance | Crss | pF | 247 | VGS = 0 V, VDD = 700 V, Typ |
| Output capacitance | Coss | pF | 1724 | VGS = 0 V, VDD = 700 V, Typ |
| Total gate charge | Qg | nC | 99 | VGS = 5 V/20 V, VDD = 470 V, ID = 30 A, Typ |
| Gate-source charge | Qgs | nC | 33 | VGS = 5 V/20 V, VDD = 470 V, ID = 30 A, Typ |
| Gate-drain charge | Qgd | nC | 18 | VGS = 5 V/20 V, VDD = 470 V, ID = 30 A, Typ |
| Turn-on delay time | td(on) | ns | 12 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Current rise time | tr | ns | 9 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Turn-off delay time | td(off) | ns | 21 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Current fall time | tf | ns | 35 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Turn-on switching energy | Eon | J | 247 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Turn-off switching energy | Eoff | J | 53 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Turn-on delay time | td(on) | ns | 9 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Current rise time | tr | ns | 40 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Turn-off delay time | td(off) | ns | 52 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Current fall time | tf | ns | 52 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Turn-on switching energy | Eon | J | 285 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Turn-off switching energy | Eoff | J | 52 | VDD = 470 V, VGS = -5 V/20 V, ID = 50 A, RG(ext) = 4.0 , Typ |
| Equivalent series resistance | ESR | 1.13 | f = 1 MHz, 25 mV, drain short, Typ | |
| Short circuit withstand time | SCWT | s | 3 | VDS = 560 V, VGS = 20 V, Typ |
| Avalanche energy, single pulse | EAS | mJ | 1400 | VDS = 150 V, VGS = 20 V, ID = 30 A, Typ |
| Body Diode Characteristics | ||||
| Diode forward voltage | VSD | V | 3.8 | ISD = 30 A, VGS = 0 V, Typ |
| Diode forward voltage | VSD | V | 4.0 | ISD = 30 A, VGS = 5 V, Typ |
| Reverse recovery time | trr | ns | 75 | ISD = 30 A, VGS = 5 V, VDD = 470 V, dl/dt = 1000 A/s, Typ |
| Reverse recovery charge | Qrr | nC | 305 | ISD = 30 A, VGS = 5 V, VDD = 470 V, dl/dt = 1000 A/s, Typ |
| Reverse recovery current | IRRM | A | 11 | ISD = 30 A, VGS = 5 V, VDD = 470 V, dl/dt = 1000 A/s, Typ |
Applications
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
2410121951_MICROCHIP-MSC035SMA070B4_C6684980.pdf
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