Low resistance N Channel MOSFET MATSUKI MEE7816S for power management in portable electronic circuits
Key Attributes
Model Number:
MEE7816S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
19.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
119pF
Number:
1 N-channel
Input Capacitance(Ciss):
314pF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
15.5nC@10V
Mfr. Part #:
MEE7816S
Package:
WDFN-8(3x3)
Product Description
Product Overview
The MEE7816S is an N-Channel logic enhancement mode power field-effect transistor designed with high cell density EMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as notebook computer power management and other battery-powered circuits. It offers low in-line power loss in a very small outline surface mount package.
Product Attributes
- Brand: MEE (implied from product name MEE7816S-G)
- Product Type: N-Channel MOSFET
- Technology: EMOS trench
- Certifications: Green product-Halogen free
- Package Type: DFN(S) 3X3
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | 100 | V | |||
| VGS | ±20 | V | ||||
| ID | TC=25 | 19.8 | A | |||
| ID | TC=70 | 15.8 | A | |||
| IDM | Pulsed Drain Current | 79 | A | |||
| Maximum Power Dissipation | PD | TC=25 | 62.5 | W | ||
| PD | TC=70 | 40 | W | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | |||
| Thermal Resistance-Junction to Case | RJC | * | 2 | /W | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 3 | V | |
| Gate Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | μA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID= 8A | 85 | 100 | mΩ | |
| RDS(ON) | VGS=10V | ≤100 | mΩ | |||
| Diode Forward Voltage | VSD | IS=8A, VGS=0V | 0.9 | 1.2 | V | |
| Total Gate Charge | Qg | VDS=50V, VGS=10V, ID=8A | 15.5 | nC | ||
| Gate-Source Charge | Qgs | VDS=50V, VGS=10V, ID=8A | 2.6 | nC | ||
| Gate-Drain Charge | Qgd | VDS=50V, VGS=10V, ID=8A | 3.6 | nC | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V,f=1MHz | 314 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V,f=1MHz | 119 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V,f=1MHz | 15 | pF | ||
| Turn-On Delay Time | td(on) | VDS=50V, RL =50Ω, VGS=10V, RG=1Ω, ID=1A | 8.4 | ns | ||
| Turn-On Rise Time | tr | VDS=50V, RL =50Ω, VGS=10V, RG=1Ω, ID=1A | 24.8 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=50V, RL =50Ω, VGS=10V, RG=1Ω, ID=1A | 30.7 | ns | ||
| Turn-Off Fall Time | tf | VDS=50V, RL =50Ω, VGS=10V, RG=1Ω, ID=1A | 2.5 | ns | ||
| Reverse Recovery Time | Trr | ID=7A,VGS=0V,di/dt=100A/us | 25 | ns | ||
| Reverse Recovery Charge | Qrr | ID=7A,VGS=0V,di/dt=100A/us | 24 | nC |
2409291234_MATSUKI-MEE7816S_C2841361.pdf
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