Silicon Carbide Power MOSFET MICROCHIP MSC750SMA170B4 1700 Volt 750 Milliamp High Voltage Switching Device

Key Attributes
Model Number: MSC750SMA170B4
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+175℃
RDS(on):
940mΩ
Gate Threshold Voltage (Vgs(th)):
3.25V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Input Capacitance(Ciss):
184pF
Output Capacitance(Coss):
14pF
Pd - Power Dissipation:
68W
Gate Charge(Qg):
11nC
Mfr. Part #:
MSC750SMA170B4
Package:
TO-247-4
Product Description

Product Overview

The MSC750SMA170B is a 1700 V, 750 m Silicon Carbide (SiC) N-Channel Power MOSFET designed to enhance performance in high-voltage applications compared to traditional silicon solutions. It offers lower total cost of ownership, high efficiency for compact systems, and simplified driving and paralleling. Key features include low capacitances, fast switching, stable operation at high temperatures (TJ(max) = 175 C), a fast and reliable body diode, and superior avalanche ruggedness. This device is ideal for applications such as PV inverters, industrial motor drives, smart grid infrastructure, H/EV powertrains, EV chargers, and power supplies.

Product Attributes

  • Brand: Microsemi
  • Material: Silicon Carbide (SiC)
  • Certification: RoHS compliant

Technical Specifications

CharacteristicSymbolUnitRatingsTest Conditions
Drain source voltageVDSSV1700
Continuous drain current at TC = 25 CIDA7
Continuous drain current at TC = 100 CIDA5
Pulsed drain currentIDMA12
Gate-source voltageVGSV23 to 10
Total power dissipation at TC = 25 CPDW68
Linear derating factorW/C0.46
Junction-to-case thermal resistanceRJCC/W1.46 (Typ)
Operating junction temperatureTJC-55 to 175
Storage temperatureTSTGC-55 to 150
Soldering temperature for 10 seconds (1.6 mm from case)TLC300
Mounting torque, 6-32 or M3 screwN-m1.1 (Typ)
Package weightWtg6.2 (Typ)
Drain-source breakdown voltageV(BR)DSSV1700VGS = 0 V, ID = 100 A
Drain-source on resistanceRDS(on)m750 (Typ)VGS = 20 V, ID = 2.5 A
Gate-source threshold voltageVGS(th)V1.9 (Typ)VGS = VDS, ID = 100 A
Threshold voltage coefficientVGS(th)/ TJmV/C5.7 (Typ)VGS = VDS, ID = 100 A
Zero gate voltage drain currentIDSSA100 (Max)VDS = 1700 V, VGS = 0 V
Zero gate voltage drain current at TJ = 125 CIDSSnA500 (Typ)VDS = 1700 V, VGS = 0 V
Gate-source leakage currentIGSSnA100 (Max)VGS = 20 V/10 V
Input capacitanceCisspF184 (Typ)VGS = 0 V, VDD = 1360 V, VAC = 25 mV, = 1 MHz
Reverse transfer capacitanceCrsspF14 (Typ)
Output capacitanceCosspF184 (Typ)
Total gate chargeQgnC11 (Typ)VGS = 5 V/20 V, VDD = 850 V, ID = 2.5 A
Gate-source chargeQgsnC2.9 (Typ)
Gate-drain chargeQgdnC2.1 (Typ)
Turn-on delay timetd(on)ns13 (Typ)VDD = 1200 V, VGS = 5 V/20 V, ID = 5 A, RG(ext) = 8
Voltage fall timetfns12 (Typ)
Turn-off delay timetd(off)ns7 (Typ)
Voltage rise timetrns13 (Typ)
Turn-on switching energyEonJ107 (Typ)
Turn-off switching energyEoffJ17 (Typ)
Turn-on delay time at TJ = 150 Ctd(on)ns13 (Typ)VDD = 1200 V, VGS = 5 V/20 V, ID = 5 A, RG(ext) = 8
Voltage fall time at TJ = 150 Ctfns7 (Typ)
Turn-off delay time at TJ = 150 Ctd(off)ns8 (Typ)
Voltage rise time at TJ = 150 Ctrns13 (Typ)
Turn-on switching energy at TJ = 150 CEonJ185 (Typ)
Turn-off switching energy at TJ = 150 CEoffJ20 (Typ)
Equivalent series resistanceESR2.89 (Typ) = 1 MHz, 25 mV, drain short
Short circuit withstand timeSCWTs2.5 (Typ)VDS = 1200 V, VGS = 20 V
Avalanche energy, single pulseEASmJ360 (Typ)VDS = 150 V, VGS = 20 V, ID = 2.5 A
Diode forward voltageVSDV3.8 (Typ)ISD = 2.5 A, VGS = 0 V
Diode forward voltageVSDV3.9 (Typ)ISD = 2.5 A, VGS = 5 V
Reverse recovery timetrrns18 (Typ)ISD = 5 A, VGS = 5 V, VDD = 1200 V, dl/dt = 2000 A/s
Reverse recovery chargeQrrnC120 (Typ)
Reverse recovery currentIRRMA3.0 (Typ)Rg = 8

2411261433_MICROCHIP-MSC750SMA170B4_C3281102.pdf

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