Planar Power MOSFET MCC MCU05N60A-TP RoHS Compliant Lead Free Finish UL 94 V0 Flammability Rating
Key Attributes
Model Number:
MCU05N60A-TP
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
3.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
54pF
Input Capacitance(Ciss):
555pF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
MCU05N60A-TP
Package:
DPAK
Product Description
Product Overview
The MCU05N60A is a Planar Power MOSFET utilizing advanced technology to achieve lower capacitance and moisture sensitivity. This Halogen-Free, "Green" device meets UL 94 V-0 flammability rating and features a Lead-Free Finish RoHS Compliant design. It is suitable for applications requiring high reliability and compliance with environmental standards.
Product Attributes
- Brand: MCC
- Technology: Planar Power MOSFET
- Environmental Compliance: Halogen Free. "Green" Device, RoHS Compliant
- Flammability Rating: UL 94 V-0
- Finish: Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance Junction to Ambient (Note 2) | RJA | 50 | C/W | |||
| Thermal Resistance Junction to Case | RJC | 1.3 | C/W | |||
| Total Power Dissipation (Note 3) | PD | TC=25C | 96 | W | ||
| Pulsed Drain Current (Note 4) | IDM | 210 | A | |||
| Continuous Drain Current | ID | TC=100C | 4.5 | A | ||
| Single Pulsed Avalanche Energy (Note 4) | EAS | 210 | mJ | |||
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 600 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =30V | 100 | nA|||
| Zero Gate Voltage Drain Current | IDSS | VDS=600V, VGS=0V | 1 | A|||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 4.0 | V | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=2.25A | 2.0 | 3.3 | ||
| Forward Transconductance | gfs | VDS=40V, ID=2.25A | 2.9 | S | ||
| Continuous Body Diode Current | IS | 4.5 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=4.5A | 1.4 | V|||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | 555 | pF | ||
| Output Capacitance | Coss | 54 | pF | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | |||
| Total Gate Charge | Qg | VDS=300V,VGS=10V, ID=4.5A | 14 | nC | ||
| Gate-Source Charge | Qgs | 2.8 | nC | |||
| Gate-Drain Charge | Qgd | 5.3 | nC | |||
| Turn-On Delay Time | td(on) | VDS=300V,VGS=10V, RG=2.2, IDS=4.5A | 24 | ns | ||
| Turn-On Rise Time | tr | 13 | ns | |||
| Turn-Off Delay Time | td(off) | 18 | ns | |||
| Turn-Off Fall Time | tf | 22 | ns | |||
| Reverse Recovery Time | trr | ISD=2.25A,dlSD/dt=100A/s | 224 | ns | ||
| Reverse Recovery Charge | Qrr | 1313 | nC | |||
| Gate Resistance | Rg | F=1MHz, Open Drain | 3.2 | |||
Notes:
- Note 1: Halogen free "Green" products are defined as those which contain less than 900ppm bromine, 900ppm chlorine, 1500ppm total Bromine + Chlorine, and 1000ppm antimony compounds.
- Note 2: The value of RJA is measured with the device mounted on 1 in FR-4 board with 2 oz Copper, in a still air environment with TA = 25C.
- Note 3: Pulse width limited by max. junction temperature.
- Note 4: PD is based on max. junction temperature, using junction-to-case thermal resistance.
2502181738_MCC-MCU05N60A-TP_C779007.pdf
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