Low On Resistance P Channel MOSFET MATSUKI ME4835 for Power Switching in Portable Electronic Devices
Key Attributes
Model Number:
ME4835
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
RDS(on):
35mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
1.9nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
ME4835
Package:
SOP-8
Product Description
Product Overview
The ME4835 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like power management in cellular phones, notebook computers, and other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface mount package.
Product Attributes
- Brand: ME (implied from product name ME4835)
- Technology: P-Channel, Logic Enhancement Mode, DMOS Trench
- Package: SOP-8
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Absolute Maximum Ratings | VDSS | -30 | V | |||
| VGSS | ±20 | V | ||||
| ID (10 secs) | -9.1 | A | TA=25 | |||
| ID (Steady State) | -7.3 | A | TA=70 | |||
| IDM | -30 | A | Pulsed Drain Current | |||
| EAS | 50 | mJ | Avalanche Energy with Single Pulse(L=0.1mH) | |||
| Electrical Characteristics | VGS(th) | -1 | -1.4 | -3 | V | VDS=VGS, ID=-250A |
| IGSS | ±100 | nA | VDS=0V, VGS=±20V | |||
| IDSS | -1 | -25 | μA | VDS=-30V, VGS=0V, TJ=55 | ||
| RDS(ON) | 15 | 20 | mΩ | VGS=-10V, ID=-9.1A | ||
| 25 | 35 | mΩ | VGS=-4.5V, ID=-6.9A | |||
| Dynamic Characteristics | Qg | 38 | 45 | nC | VDS=-15V, VGS=-10V, ID=-9.1A | |
| Qgs | 7.7 | nC | ||||
| Qgd | 9 | nC | ||||
| Rg | 5.5 | Ω | VGS=0V, VDS=0V, f=1MHZ | |||
| Capacitance | Ciss | 1730 | 1900 | pF | VDS=-15V, VGS=0V, f=1MHz | |
| Coss | 240 | pF | ||||
| Crss | 70 | pF | ||||
| Switching Time | td(on) | 41 | 50 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω | |
| tr | 19 | 23 | ns | |||
| td(off) | 105 | 120 | ns | |||
| tf | 17 | 20 | ns | |||
| Thermal Characteristics | RθJA | 30 | 62 | °C/W | T≤10 sec (Steady State) | |
| RθJC | 38 | °C/W |
2410121455_MATSUKI-ME4835_C3647153.pdf
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