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quality ME60N04 Power MOSFET Designed for Low Voltage Applications and High Current Electronic Power Systems factory
quality ME60N04 Power MOSFET Designed for Low Voltage Applications and High Current Electronic Power Systems factory

ME60N04 Power MOSFET Designed for Low Voltage Applications and High Current Electronic Power Systems

Key Attributes
Model Number: ME60N04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
39A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
1.5nF
Pd - Power Dissipation:
156W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
ME60N04
Package:
TO-252-3
Product Description

Product Overview

The ME60N04 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as LCD inverters, computer power management, and DC-to-DC converters requiring low in-line power loss. Key features include extremely low RDS(ON) and exceptional DC current capability.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Pb-free (ME60N04), Green product-Halogen free (ME60N04-G)

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Absolute Maximum RatingsDrain-Source Voltage40V
Gate-Source Voltage±20V
Continuous Drain CurrentTC=2539A
Continuous Drain CurrentTC=7031A
Pulsed Drain Current156A
Maximum Power DissipationTC=2530W
Maximum Power DissipationTC=7018.5W
Operating Junction Temperature-55150
Thermal Resistance-Junction to AmbientRJANote A42/W
Thermal Resistance-Junction to CaseRJCNote A4.3/W
Electrical CharacteristicsDrain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID=250A40V
Gate Threshold VoltageVGS(th)VDS=VGS, ID=250A11.93V
Gate Leakage CurrentIGSSVDS=0V, VGS=±20V±100nA
Zero Gate Voltage Drain CurrentIDSSVDS=40V, VGS=0V1A
Drain-Source On-State ResistanceRDS(ON)VGS=10V, ID=15A912m
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V, ID=13A1317m
Diode Forward VoltageVSDIS=15A, VGS=0V0.81.2V
Total Gate ChargeQg(TOT)VGS=10V3136nC
Total Gate ChargeQgVGS=4.5V1618nC
Gate-Source ChargeQgsVDS=20V, ID=15A6.5nC
Gate-Drain ChargeQgdVDS=20V, ID=15A8.3nC
Gate ResistanceRgVgs=Vds=0V, f=1MHz1.6
CapacitanceInput capacitanceCissVDS=20V, VGS=0V, f=1MHz12401500pF
Output CapacitanceCossVDS=20V, VGS=0V, f=1MHz170pF
Reverse Transfer CapacitanceCrssVDS=20V, VGS=0V, f=1MHz60pF
Gate ResistanceRgVgs=Vds=0V, f=1MHZ1.6
Switching CharacteristicsTurn-On Delay Timetd(on)VDD=20V, ID=1A, VGS=10V, RGEN=61620ns
Turn-On Rise TimetrVDD=20V, ID=1A, VGS=10V, RGEN=61317ns
Turn-Off Delay Timetd(off)VDD=20V, ID=1A, VGS=10V, RGEN=66075ns
Turn-On Fall TimetfVDD=20V, ID=1A, VGS=10V, RGEN=6710ns

Applications

  • Power Management
  • DC/DC Converter
  • LCD TV & Monitor Display inverter
  • CCFL inverter
  • Secondary Synchronous Rectification

2410121502_MATSUKI-ME60N04_C2841469.pdf

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