Surface Mount N Channel Power MOSFET MATSUKI ME13N10A with Low RDS ON and High Pulsed Drain Current
Key Attributes
Model Number:
ME13N10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
11.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
145mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
524pF
Pd - Power Dissipation:
29.9W
Gate Charge(Qg):
16.4nC@10V
Mfr. Part #:
ME13N10A
Package:
TO-252-3L
Product Description
Product Overview
The ME13N10A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include an RDS(ON) of 145m@VGS=10V, super high density cell design for extremely low RDS(ON), and exceptional on-resistance and maximum DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Variants: ME13N10A (Pb-free), ME13N10A-G (Green product-Halogen free)
- Certifications: Pb-free, Green product-Halogen free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | VDS | 100 | V | D-S |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (TC=25) | ID | 11.3 | A | |
| Continuous Drain Current (TC=70) | ID | 9.0 | A | |
| Pulsed Drain Current | IDM | 45.4 | A | |
| Maximum Power Dissipation (TC=25) | PD | 29.9 | W | |
| Maximum Power Dissipation (TC=70) | PD | 19.1 | W | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Case* | RJC | 4.17 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | V(BR)DSS | 100 | V | |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 1 to 3 | V | |
| Gate Leakage Current (VDS=0V, VGS=20V) | IGSS | 100 | nA | |
| Zero Gate Voltage Drain Current (VDS=100V, VGS=0V) | IDSS | 1 | A | |
| Drain-Source On-State Resistance (VGS=10V, ID= 5A) | RDS(ON) | 115 to 145 | m | a. Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing. |
| Diode Forward Voltage (IS=9A, VGS=0V) | VSD | 1.2 | V | |
| Total Gate Charge | Qg | 16.4 | nC | VDS=30V, VGS=10V, ID=3A |
| Gate-Source Charge | Qgs | 3.8 | nC | |
| Gate-Drain Charge | Qgd | 3.5 | nC | |
| Input capacitance | Ciss | 524 | pF | VDS=25V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 55 | pF | |
| Reverse Transfer Capacitance | Crss | 32 | pF | |
| Turn-On Delay Time | td(on) | 11.7 | ns | VDD=30V, RL =15, VGS=10V, RGEN=2.5 |
| Turn-On Rise Time | tr | 10.9 | ns | |
| Turn-Off Delay Time | td(off) | 27.3 | ns | |
| Turn-Off Fall Time | tf | 2.6 | ns |
2410121527_MATSUKI-ME13N10A_C2841365.pdf
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