P Channel Enhancement Mode Field Effect Transistor MCC SI2303 TP with Low RDS ON in SOT 23 Package
Key Attributes
Model Number:
SI2303-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
-
Output Capacitance(Coss):
87pF
Input Capacitance(Ciss):
226pF
Pd - Power Dissipation:
250mW
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
SI2303-TP
Package:
SOT-23
Product Description
Product Overview
The SI2303 is a P-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering extremely low RDS(ON). It is rugged, reliable, and available in a SOT-23 package. This lead-free product meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1. Halogen-free options are available upon request.
Product Attributes
- Brand: Micro Commercial Components (MCC)
- Package: SOT-23
- Certifications: UL 94 V-0 flammability rating, Moisture Sensitivity Level 1
- Environmental: Lead free product, Halogen free available (suffix "-HF")
- Marking Code: S3
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings @ 25 C Unless Otherwise Specified | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Drain Current-Continuous | ID | -3 | A | |||
| Drain Current-Pulsed | IDM | -10 | A | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Total Power Dissipation | PD | 0.25 | W | |||
| Thermal Resistance Junction to Ambient | RJA | b | 200 | C/W | ||
| Operating Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature | TSTG | -55 | +150 | C | ||
| Electrical Characteristics TA = 25 C unless otherwise noted | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -10A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -30V, VGS = 0V | -1 A | |||
| Gate Body Leakage Current, Forward | IGSSF | VGS = 20V, VDS = 0V | 100 | nA | ||
| Gate Body Leakage Current, Reverse | IGSSR | VGS = -20V, VDS = 0V | -100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID =-250A | -1 | -3 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS = -10V, ID = -2.6A | 130 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS = -4.5V, ID = -2.0A | 180 | m | ||
| Forward Transconductance | gFS | VDS = -10V, ID = -1.7A | 2.4 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = -15V, VGS = 0V, f = 1.0 MHz | 226 | pF | ||
| Output Capacitance | Coss | VDS = -15V, VGS = 0V, f = 1.0 MHz | 87 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -15V, VGS = 0V, f = 1.0 MHz | 19 | pF | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = -15V, ID = -1A, VGEN = -10V, RG=6, RL=15 | 9 | 20 | ns | |
| Turn-On Rise Time | tr | VDD = -15V, ID = -1A, VGEN = -10V, RG=6, RL=15 | 9 | 20 | ns | |
| Turn-Off Delay Time | td(off) | VDD = -15V, ID = -1A, VGEN = -10V, RG=6, RL=15 | 18 | 35 | ns | |
| Turn-Off Fall Time | tf | VDD = -15V, ID = -1A, VGEN = -10V, RG=6, RL=15 | 6 | 20 | ns | |
| Total Gate Charge | Qg | VDS = -15V, ID = -1.7A, VGS =-10V | 5.8 | 10 | nC | |
| Gate-Source Charge | Qgs | VDS = -15V, ID = -1.7A, VGS =-10V | 0.8 | nC | ||
| Gate-Drain Charge | Qg d | VDS = -15V, ID = -1.7A, VGS =-10V | 1.5 | nC | ||
| Drain-Source Diode Characteristics and Maximun Ratings | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0V, IS = -1.25A | -1.2 | V | ||
Notes:
a. Repetitive Rating: Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t < 10 sec.
c. Pulse Test: Pulse Width < 300s, Duty Cycle < 2%.
d. Guaranteed by design, not subject to production testing.
Device Packing:
Part Number-TP Tape&Reel: 3Kpcs/Reel
Ordering Information:
Add "-HF" suffix for halogen free, e.g., Part Number-TP-HF.
2410121704_MCC-SI2303-TP_C133325.pdf
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