Power transistor MATSUKI ME12N15 N Channel MOSFET designed for high side switching in low voltage circuits
Key Attributes
Model Number:
ME12N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
13.6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
150mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
29pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
839pF@25V
Pd - Power Dissipation:
44.6W
Gate Charge(Qg):
31.8nC@10V
Mfr. Part #:
ME12N15
Package:
TO-252-3
Product Description
Product Overview
The ME12N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: ME (Matsuki Electric/Force Mos)
- Product Type: N-Channel MOSFET
- Technology: DMOS Trench
- Certifications: Pb-free (ME12N15), Green product-Halogen free (ME12N15-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
|---|---|---|---|---|
| Maximum Ratings | VDS | 150 | V | |
| VGS | 20 | V | ||
| ID (TC=25) | 13.6 | A | ||
| ID (TC=70) | 10.9 | A | ||
| IDM | 54 | A | ||
| PD (TC=25) | 44.6 | W | ||
| PD (TC=70) | 28.5 | W | ||
| Electrical Characteristics | BVDSS | 150 | V | VGS=0V, ID=250A |
| VGS(th) | 1 - 3 | V | VDS=VGS, ID=250A | |
| IGSS | 100 | nA | VDS=0V, VGS=20V | |
| IDSS | 1 | A | VDS=120V, VGS=0V | |
| RDS(ON) | 150 | m | VGS=10V, ID=8A | |
| RDS(ON) | 250 | m | VGS=4.5V, ID=5A | |
| VSD | 1.3 | V | IS=8A, VGS=0V | |
| Dynamic Characteristics | Qg | 31.8 | nC | VDD=120V,VGS=10V, ID=8A |
| Qgs | 5.8 | nC | ||
| Qgd | 9.2 | nC | ||
| Ciss | 839 | pF | VDS=25V, VGS=0V, f=1MHz | |
| Coss | 78 | pF | VDS=25V, VGS=0V, f=1MHz | |
| Switching Characteristics | td(on) | 13.6 | ns | VGS=10V,VDD=75V, RG=1,ID=8A |
| tr | 6.2 | ns | VGS=10V,VDD=75V, RG=1,ID=8A | |
| Switching Characteristics | td(off) | 36.7 | ns | VGS=10V,VDD=75V, RG=1,ID=8A |
| tf | 3.2 | ns | VGS=10V,VDD=75V, RG=1,ID=8A | |
| Thermal Resistance | RJC | 2.8 | /W | * The device mounted on 1in2 FR4 board with 2 oz copper. |
| TJ, Tstg | -55 to 150 | Junction and Storage Temperature Range |
2509180925_MATSUKI-ME12N15_C2841353.pdf
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