Low resistance power transistor MATSUKI ME12N15-G designed for switching in battery powered circuits
Key Attributes
Model Number:
ME12N15-G
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
10.9A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
150mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
29pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
839pF@25V
Pd - Power Dissipation:
28.5W
Gate Charge(Qg):
31.8nC@10V
Mfr. Part #:
ME12N15-G
Package:
TO-252-3
Product Description
Product Overview
The ME12N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ME12N15), Green product-Halogen free (ME12N15-G)
Technical Specifications
| Parameter | Symbol | ME12N15/ME12N15-G | Unit |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | 150 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC=25) | ID | 13.6 | A |
| Continuous Drain Current (TC=70) | ID | 10.9 | A |
| Pulsed Drain Current | IDM | 54 | A |
| Maximum Power Dissipation (TC=25) | PD | 44.6 | W |
| Maximum Power Dissipation (TC=70) | PD | 28.5 | W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |
| Thermal Resistance-Junction to Case* | RθJC | 2.8 | /W |
| Electrical Characteristics (TJ=25 Unless Otherwise Specified) | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250µA) | BVDSS | 150 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250µA) | VGS(th) | 1 - 3 | V |
| Gate-Body Leakage (VDS=0V, VGS=±20V) | IGSS | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS=120V, VGS=0V) | IDSS | 1 | µA |
| Drain-Source On-Resistance* (VGS=10V, ID=8A) | RDS(ON) | 150 | mΩ |
| Drain-Source On-Resistance* (VGS=4.5V, ID=5A) | RDS(ON) | 250 | mΩ |
| Diode Forward Voltage* (IS=8A, VGS=0V) | VSD | 1.3 | V |
| Dynamic Characteristics (TJ=25 Unless Otherwise Specified) | |||
| Total Gate Charge | Qg | 31.8 | nC |
| Gate-Source Charge | Qgs | 5.8 | nC |
| Gate-Drain Charge | Qgd | 9.2 | nC |
| Input Capacitance (VDS=25V, VGS=0V, f=1MHz) | Ciss | 839 | pF |
| Output Capacitance (VDS=25V, VGS=0V, f=1MHz) | Coss | 78 | pF |
| Reverse Transfer Capacitance (VDS=25V, VGS=0V, f=1MHz) | Crss | 29 | pF |
| Turn-On Delay Time (VGS=10V,VDD=75V, RG=1Ω,ID=8A) | td(on) | 13.6 | ns |
| Turn-On Rise Time (VGS=10V,VDD=75V, RG=1Ω,ID=8A) | tr | 6.2 | ns |
| Turn-Off Delay Time (VGS=10V,VDD=75V, RG=1Ω,ID=8A) | td(off) | 36.7 | ns |
| Turn-Off Fall Time (VGS=10V,VDD=75V, RG=1Ω,ID=8A) | tf | 3.2 | ns |
2410121657_MATSUKI-ME12N15-G_C709763.pdf
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