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quality Low On Resistance P Channel MOSFET MCC SI3401AHE3 TP with High DC Current Capability and Performance factory
quality Low On Resistance P Channel MOSFET MCC SI3401AHE3 TP with High DC Current Capability and Performance factory

Low On Resistance P Channel MOSFET MCC SI3401AHE3 TP with High DC Current Capability and Performance

Key Attributes
Model Number: SI3401AHE3-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.4A
RDS(on):
47mΩ@4.5V,4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Output Capacitance(Coss):
127pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
1.05nF
Mfr. Part #:
SI3401AHE3-TP
Package:
SOT-23
Product Description

Product Overview

The SI3401AHE3 is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(on) and exceptional on-resistance and maximum DC current capability. This AEC-Q101 qualified device features a high-density cell design and is Halogen Free and RoHS Compliant. It is suitable for applications requiring efficient power handling and reliable performance.

Product Attributes

  • Brand: MCC (Micro Commercial Components)
  • Model: SI3401AHE3
  • Channel Type: P-Channel
  • Certifications: AEC-Q101 Qualified, Halogen Free, RoHS Compliant
  • Flammability Rating: Epoxy Meets UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Packaging: Tape & Reel (3Kpcs/Reel)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID -4.4 A
Pulsed Drain Current IDM -1.2 A
Total Power Dissipation PD 1.2 W
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance Junction to Ambient 104 C/W
Off Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250A -30 V
Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V -1 A
Gate-Source Leakage Current IGSS VDS =0V, VGS =12V 100 nA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250A -0.7 -1.3 V
On Characteristics
Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-4.2A 41 60 m
VGS=-4.5V, ID=-4A 47 70 m
VGS=-2.5V, ID=-1A 61 85 m
Forward Tranconductance gFS VDS=-5V, ID=-5A 7 S
Drain-Source Diode Characteristics
Diode Forward Voltage VSD VGS=0V, IS=-1A (Note 2) -1 V
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V, VGS=0V, f =1MHz 1050 pF
Output Capacitance Coss 127 pF
Reverse Transfer Capacitance Crss 85 pF
Switching Characteristics
Turn-On Delay Time td(on) VGS=-10V,VDS=-15V,RL=3.6, RGEN=6 (Note 3) 6.5 ns
Turn-On Rise Time tr 3.5 ns
Turn-Off Delay Time td(off) 40 ns
Turn-Off Fall Time tf 13 ns
Dimensions (SOT-23)
DIM INCHES MM NOTE MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
L 0.020 0.50 0.007 0.20

Notes:

  • Note 1: Halogen free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  • Note 2: Pulse Test: Pulse Width300s, Duty Cycle 2%.
  • Note 3: Guaranteed by Design, Not Subject to Production Testing.

2410010103_MCC-SI3401AHE3-TP_C3289971.pdf

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