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quality Low On Resistance Dual N Channel MOSFET MATSUKI ME4970 Suitable for Cellular Phone and Notebook Power factory
quality Low On Resistance Dual N Channel MOSFET MATSUKI ME4970 Suitable for Cellular Phone and Notebook Power factory

Low On Resistance Dual N Channel MOSFET MATSUKI ME4970 Suitable for Cellular Phone and Notebook Power

Key Attributes
Model Number: ME4970
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
13.2mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
71pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
841pF@10V
Pd - Power Dissipation:
52W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
ME4970
Package:
SOP-8
Product Description

Product Overview

The ME4970 is a Dual N-Channel logic enhancement mode power MOSFET featuring high cell density, DMOS trench technology for minimized on-state resistance. It is ideal for low-voltage applications such as power management in cellular phones and notebook computers, and other battery-powered circuits requiring high-side switching and low power loss in a small outline surface mount package. Key features include extremely low RDS(ON) and exceptional DC current capability.

Product Attributes

  • Brand: Matsuki Electric/Force mos
  • Product Series: ME4970/ME4970-G
  • Date: Feb, 2012-Ver4.4
  • Certifications: Pb-free (ME4970), Green product-Halogen-free (ME4970-G)

Technical Specifications

Parameter Symbol Limit Unit Condition
Drain-Source Voltage VDS 30 V -
Gate-Source Voltage VGS ±20 V -
Continuous Drain Current ID 10 A TA=25
Continuous Drain Current ID 8.3 A TA=70
Pulsed Drain Current IDM 38 A -
Maximum Power Dissipation PD 2 W TA=25
Maximum Power Dissipation PD 1.2 W TA=70
Operating Junction Temperature TJ -55 to 150 -
Thermal Resistance-Junction to Ambient* RJA 52 /W t10 sec
Thermal Resistance-Junction to Ambient* RJA 93 /W Steady-State
Thermal Resistance-Junction to Foot (Drain) Steady-State RJF 35 /W Steady-State
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250A
Gate Threshold Voltage VGS(th) 1 V VDS=VGS, ID=250A
Gate Threshold Voltage VGS(th) 3 V VDS=VGS, ID=250A
Gate Leakage Current IGSS ±100 nA VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current IDSS 1 A VDS=24V, VGS=0V
Drain-Source On-Resistance RDS(ON) 13.2 m VGS=10V, ID=10A
Drain-Source On-Resistance RDS(ON) 16 m VGS=10V, ID=10A
Drain-Source On-Resistance RDS(ON) 16.8 m VGS=4.5V, ID=8A
Drain-Source On-Resistance RDS(ON) 20 m VGS=4.5V, ID=8A
Diode Forward Voltage VSD 0.8 V IS=8.2A, VGS=0V
Diode Forward Voltage VSD 1.2 V IS=8.2A, VGS=0V
Gate Resistance Rg 1 f=1MHz
Total Gate Charge Qg 9.5 nC VDS=10V, VGS=4.5V, ID=8.2A
Post-Vth Gate-Source Charge Qgs 3.6 nC -
Gate-Drain Charge Qgd 3.4 nC -
Input Capacitance Ciss 841 pF VDS=25V, VGS=0V, f=1MHz
Output Capacitance Coss 250 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss 71 pF VDS=25V, VGS=0V, f=1MHz
Turn-On Delay Time td(on) 14 ns VDD=15V, RL =15 ID=1A, VGEN=10V, RG=6
Turn-On Rise Time tr 12 ns VDD=15V, RL =15 ID=1A, VGEN=10V, RG=6
Turn-Off Delay Time td(off) 43 ns VDD=15V, RL =15 ID=1A, VGEN=10V, RG=6
Turn-Off Fall Time tf 4 ns VDD=15V, RL =15 ID=1A, VGEN=10V, RG=6

Applications

  • Power Management in Notebooks
  • Portable Equipment
  • Battery Powered Systems
  • DC/DC Converters
  • Load Switches
  • DSC (Digital Still Cameras)
  • LCD Display Inverters

2007241236_MATSUKI-ME4970_C709736.pdf

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