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quality P channel MOSFET MCC SI3407HE3 TP with UL 94 V0 flammability rating and moisture sensitivity level 1 factory
quality P channel MOSFET MCC SI3407HE3 TP with UL 94 V0 flammability rating and moisture sensitivity level 1 factory

P channel MOSFET MCC SI3407HE3 TP with UL 94 V0 flammability rating and moisture sensitivity level 1

Key Attributes
Model Number: SI3407HE3-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
87mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
700pF
Pd - Power Dissipation:
1.3W
Mfr. Part #:
SI3407HE3-TP
Package:
SOT-23
Product Description

Product Overview

The SI3407HE3 is a P-channel MOSFET designed for various applications. It features an epoxy that meets UL 94 V-0 flammability rating, AEC-Q101 qualification, and is Moisture Sensitivity Level 1 compliant. This device is also Halogen Free and RoHS Compliant, designated by the "P" suffix. It operates within a wide temperature range and offers reliable performance with specified electrical and dynamic characteristics.

Product Attributes

  • Brand: MCCSEMI
  • Model: SI3407HE3
  • Flammability Rating: UL 94 V-0
  • Qualification: AEC-Q101 Qualified
  • Moisture Sensitivity Level: 1
  • Environmental: Halogen Free, RoHS Compliant
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS -30 V
Continuous Drain Current ID -4.1 A
Total Power Dissipation PD 1.3 W
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Thermal Resistance RthJA Junction to Ambient 96 C/W
Gate-Source Voltage VGS -20 20 V
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250A -30 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250A -1 -1.4 -3 V
Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-4.1A 50 m
Drain-Source On-Resistance RDS(on) VGS=-4.5V, ID=-3A 68 m
Diode Forward Voltage VSD VGS=0V, IS=-1A (Note 2) -1.0 V
Forward Tranconductance gFS VDS=-5V, ID=-4A (Note 2) 5.5 S
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V,VGS=0V,f=1MHz 700 pF
Output Capacitance Coss 120 pF
Reverse Transfer Capacitance Crss 75 pF
Turn-On Delay Time td(on) VGS=-10V,VDS=-15V, RL=3.6,RGEN=3 (Note 3) 8.6 ns
Turn-On Rise Time tr 5 ns
Turn-Off Delay Time td(off) 28.2 ns
Turn-Off Fall Time tf 13.5 ns
DIM INCHES MM NOTE
A 0.110 - 0.120 2.80 - 3.04
B 0.083 - 0.104 2.10 - 2.64
C 0.047 - 0.055 1.20 - 1.40
D 0.034 - 0.041 0.85 - 1.05
E 0.067 - 0.083 1.70 - 2.10
F 0.018 - 0.024 0.45 - 0.60
G 0.0004 - 0.006 0.01 - 0.15
H 0.035 - 0.043 0.90 - 1.10
J 0.003 - 0.007 0.08 - 0.18
K 0.012 - 0.020 0.30 - 0.51
L 0.020 0.50
0.007 0.20
0.031 0.800
0.035 0.900
0.037 0.950
0.037 0.950
0.079 2.000

Pin Configuration:

  • 1. GATE
  • 2. SOURCE
  • 3. DRAIN

Ordering Information:

Device Packing
SI3407HE3-TP Tape&Reel: 3Kpcs/Reel

2211171730_MCC-SI3407HE3-TP_C5272812.pdf

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