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quality Mini Circuits TAV2 14LN plus transistor suitable for ISM GSM WCDMA WiMax and HIPERLAN frequency bands factory
quality Mini Circuits TAV2 14LN plus transistor suitable for ISM GSM WCDMA WiMax and HIPERLAN frequency bands factory

Mini Circuits TAV2 14LN plus transistor suitable for ISM GSM WCDMA WiMax and HIPERLAN frequency bands

Key Attributes
Model Number: TAV2-14LN+
Product Custom Attributes
Mfr. Part #:
TAV2-14LN+
Package:
TDFN-6-EP
Product Description

Product Overview

The Mini-Circuits TAV2-14LN+ is a MMIC E-PHEMT transistor designed for ultra-low noise and medium current applications across a wide frequency range of 0.05 to 10 GHz, usable up to 12 GHz. This device offers a compelling combination of high gain (16.4 dB typ. at 6 GHz) and a very low noise figure (0.6 dB typ. at 6 GHz), contributing to lower overall system noise. Its enhanced linearity, evidenced by a high output IP3 of +30.9 dBm typ. at 6 GHz, makes it suitable for driver amplifiers in complex waveform up-converter paths and linearized transmit systems. Housed in a compact 2x2mm 6-lead MCLP package, it saves space in dense layouts. The TAV2-14LN+ requires external biasing and matching and is ideal for applications including 5G, cellular, ISM, GSM, WCDMA, WiMax, WLAN, UNII, and HIPERLAN.

Product Attributes

  • Brand: Mini-Circuits
  • Model: TAV2-14LN+
  • Technology: E-PHEMT (Enhancement mode Pseudomorphic High Electron Mobility Transistor)
  • Package: 2x2mm 6-lead MCLP (MC1630-1)
  • Impedance: 50
  • Product Marking: MCL T214

Technical Specifications

Parameter Condition Frequency (GHz) Min. Typ. Max. Units
DC Specifications
Threshold Voltage (VTH) VDS=4V, IDS=4 mA - 0.37 - - V
Saturated Drain Current (IDSS) VDS=4V, VGS=0 V - - 2.0 - A
Transconductance (GM) VDS =4V, Gm =IDS/VGS, VGS = VGS2-VGS1, VGS2=0.7V, VGS1=0.6V IDS =(IDS at VGS2)-(IDS at VGS1) - - 192 - mS
Gate leakage Current (IGSS) VGD=VGS=-3V - - 1.0 - A
RF & DC Specifications, Zo=50 OHMS
Gain VDS = +4V1, IDS = 40mA 0.05 21 23.4 25.7 dB
VDS = +4V1, IDS = 40mA 6 14.7 16.4 18 dB
VDS = +4V1, IDS = 40mA 8 12.5 13.9 15.3 dB
VDS = +4V1, IDS = 40mA 10 10.8 11.8 13.2 dB
Noise Figure VDS = +2V1, IDS = 20mA 0.05 - 0.7 - dB
VDS = +2V1, IDS = 20mA 6 - 0.6 - dB
Output Power at 1dB comp. (P1dB) VDS = +4V1, IDS = 40mA 0.05 - 17.7 - dBm
VDS = +4V1, IDS = 40mA 6 - 18.8 - dBm
Output IP3 (OIP3) VDS = +4V1, IDS = 40mA, Pout=5dBm/Tone 6 - 30.9 - dBm
VDS = +4V1, IDS = 40mA, Pout=5dBm/Tone 12 - 33.2 - dBm
Drain Current (IDS) DC - - 40 - mA
Gate Voltage (VGS) DC - - 0.44 - V
Maximum Ratings
Drain-Source Voltage (VDS) - - - - +5V V
Gate-Source Voltage (VGS) at VDS=4V - - - -5 & +1V V
Drain Current (IDS) at VDS=4V - - - 65mA mA
Total Dissipated Power (PDISS) - - - - 325mW mW
RF Input Power (PIN) 5-minute max. - - - +18 dBm dBm
RF Input Power (PIN) continuous - - - +15 dBm dBm
Channel Temperature (TCH) - - - - 150 C C
Operating Temperature (TOP) - - -40 - 85 C C
Storage Temperature (TSTD) - - -65 - 150 C C
Thermal Resistance (jc) - - - - 170 C/W C/W
Pad Description
RF-IN Gate used for RF input - - - - -
RF-OUT Drain used for RF output - - - - -
GND Source terminal, normally connected to ground - - - - -

2504101957_Mini-Circuits-TAV2-14LN-_C17461979.pdf

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