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quality P Channel Enhancement Mode Field Effect Transistor MCC SI3415 TP for Load Switching and PWM Applications factory
quality P Channel Enhancement Mode Field Effect Transistor MCC SI3415 TP for Load Switching and PWM Applications factory

P Channel Enhancement Mode Field Effect Transistor MCC SI3415 TP for Load Switching and PWM Applications

Key Attributes
Model Number: SI3415-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
73mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
1.45nF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
17.2nC@4.5V
Mfr. Part #:
SI3415-TP
Package:
SOT-23
Product Description

Product Overview

The SI3415 is a P-Channel Enhancement Mode Field Effect Transistor designed for load switching and PWM applications. It features excellent RDS(ON) and low gate charge, operating with low gate voltages. This transistor is RoHS compliant, lead-free, and meets UL 94 V-0 flammability rating. Halogen-free options are available upon request.

Product Attributes

  • Brand: Micro Commercial Components (MCC)
  • Compliance: RoHS Compliant, Lead Free
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Material: Epoxy
  • Optional Feature: Halogen Free (suffix "-HF")

Technical Specifications

Symbol Parameter Rating Unit Conditions
VDS Drain-source Voltage -20 V @ 25 C Unless Otherwise Specified
ID Drain Current-Continuous -4.0 A @ 25 C Unless Otherwise Specified
VGS Gate-source Voltage 8 V @ 25 C Unless Otherwise Specified
PD Total Power Dissipation 0.35 W @ 25 C Unless Otherwise Specified
RJA Thermal Resistance Junction to Ambient 357 C/W @ 25 C Unless Otherwise Specified
TJ Operating Junction Temperature -55 to +150 C
TSTG Storage Temperature -55 to +150 C
V(BR)DSS Drain-source breakdown voltage -20 V VGS = 0V, ID =-250A
VGS(th) Gate threshold voltage -0.3 to -1 V VDS =VGS, ID =-250A
IGSS Gate-body leakage current 10 A VDS =0V, VGS =8V
IGSS Gate-body leakage current 1 A VDS =0V, VGS =4.5V
IDSS Zero gate voltage drain current -1 A VDS =-16V, VGS =0V
RDS(ON) Drain-source on-state resistance 0.050 VGS =-4.5V, ID =-4A
0.060 VGS =-2.5V, ID =-4A
0.073 VGS =-1.8V, ID =-2A
gFS Forward transconductance 8 S VDS =-5V, ID =-4A
VSD Body diode voltage -1 V IS=-1A,VGS =0V
Ciss Input capacitance 1450 pF VDS =-10V,VGS =0V,f =1MHz
Coss Output capacitance 205 pF VDS =-10V,VGS =0V,f =1MHz
Crss Reverse transfer capacitance 160 pF VDS =-10V,VGS =0V,f =1MHz
Rg Gate resistance 6.5 VDS =0V,VGS =0V,f =1MHz
Qg Total gate charge 17.2 nC VDS =-10V,VGS =-4.5V,ID =-4A
Qgs Gate-Source charge 1.3 nC VDS =-10V,VGS =-4.5V,ID =-4A
Qgd Gate-drain charge 4.5 nC VDS =-10V,VGS =-4.5V,ID =-4A
td(on) Turn-on delay time 9.5 ns VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5
tr Turn-on rise time 17 ns VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5
td(off) Turn-off delay time 94 ns VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5
tf Turn-off fall time 35 ns VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5
SOT-23 Suggested Solder Pad Layout
DIM MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
Pin Name
1 GATE
2 SOURCE
3 DRAIN
Device Packing
Part Number Description
-TP Tape&Reel: 3Kpcs/Reel

2410121755_MCC-SI3415-TP_C133324.pdf

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