86--136 6733 2386
quality High IP3 Mini Circuits TAV 541 plus transistor designed for cellular ISM WLAN and broadband networks factory
quality High IP3 Mini Circuits TAV 541 plus transistor designed for cellular ISM WLAN and broadband networks factory

High IP3 Mini Circuits TAV 541 plus transistor designed for cellular ISM WLAN and broadband networks

Key Attributes
Model Number: TAV-541+
Product Custom Attributes
Mfr. Part #:
TAV-541+
Package:
FG-873
Product Description

Product Overview

The Mini-Circuits TAV-541+ is an ultra-low noise, high IP3 E-PHEMT transistor designed for demanding base station applications. Manufactured using Enhancement mode Pseudomorphic High Electron Mobility Transistor (E-PHEMT) technology, it operates with a single positive supply voltage. The device offers an outstanding Noise Figure, particularly below 2.5 GHz, and high IP3 performance. It is suitable for a wide bandwidth from 0.045 to 6 GHz, making it ideal for cellular, ISM, GSM, WCDMA, WiMax, WLAN, UNII, and HIPERLAN applications. Mini-Circuits also offers these units assembled into a complete 50 in/out module.

Product Attributes

  • Brand: Mini-Circuits
  • Technology: E-PHEMT (Enhancement mode Pseudomorphic High Electron Mobility Transistor)
  • Compliance: +RoHS Compliant
  • Case Style: FG873
  • Package: MCLP

Technical Specifications

Parameter Condition Min. Typ. Max. Units
DC Specifications
VGS (Operational Gate Voltage) VDS=3V, IDS=60 mA 0.37 0.48 0.69 V
VTH (Threshold Voltage) VDS=3V, IDS=4 mA 0.18 0.26 0.38 V
IDSS (Saturated Drain Current) VDS=3V, VGS=0 V 1.0 5.0 A
GM (Transconductance) VDS=3V, Gm= IDS/VGS 392 mS
IGSS (Gate leakage Current) VGD=VGS=-3V 200 A
RF Specifications, Z0=50 Ohms
NF (Noise Figure) VDS=3V, IDS=60 mA, f=0.9 GHz 0.4 dB
NF (Noise Figure) VDS=3V, IDS=60 mA, f=2.0 GHz 0.5 0.9 dB
NF (Noise Figure) VDS=3V, IDS=60 mA, f=3.9 GHz 1.0 dB
NF (Noise Figure) VDS=3V, IDS=60 mA, f=5.8 GHz 1.8 dB
Gain VDS=3V, IDS=60 mA, f=0.9 GHz 23.8 dB
Gain VDS=3V, IDS=60 mA, f=2.0 GHz 15.5 17.9 18.9 dB
Gain VDS=3V, IDS=60 mA, f=3.9 GHz 12.7 dB
Gain VDS=3V, IDS=60 mA, f=5.8 GHz 9.5 dB
OIP3 (Output IP3) VDS=3V, IDS=60 mA, f=0.9 GHz 32.1 dBm
OIP3 (Output IP3) VDS=3V, IDS=60 mA, f=2.0 GHz 30.0 33.6 dBm
OIP3 (Output IP3) VDS=3V, IDS=60 mA, f=3.9 GHz 34.2 dBm
OIP3 (Output IP3) VDS=3V, IDS=60 mA, f=5.8 GHz 32.9 dBm
P1dB (Power output at 1 dB Compression) VDS=3V, IDS=60 mA, f=0.9 GHz 18.9 dBm
P1dB (Power output at 1 dB Compression) VDS=3V, IDS=60 mA, f=2.0 GHz 19.1 dBm
P1dB (Power output at 1 dB Compression) VDS=3V, IDS=60 mA, f=3.9 GHz 19.4 dBm
P1dB (Power output at 1 dB Compression) VDS=3V, IDS=60 mA, f=5.8 GHz 19.6 dBm
Maximum Ratings
VDS (Drain-Source Voltage) 5 V
VGS (Gate-Source Voltage) -5 0.7 V
VGD (Gate-Drain Voltage) -5 0.7 V
IDS (Drain Current) 120 mA
IGS (Gate Current) 2 mA
PDISS (Total Dissipated Power) 550 mW
PIN (RF Input Power) 17 dBm
TCH (Channel Temperature) 150 C
TOP (Operating Temperature) -40 85 C
TSTD (Storage Temperature) -65 150 C
JC (Thermal Resistance) 112 C/W
Dimensions
Size MCLP package 1.18 1.42 0.85 mm

2410121845_Mini-Circuits-TAV-541-_C3278088.pdf

Related Products
quality IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes factory
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
quality Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction factory
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
quality Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating factory
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.