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quality High power application Minos E13009L MNS fast switch with excellent current gain and switching speed factory
quality High power application Minos E13009L MNS fast switch with excellent current gain and switching speed factory

High power application Minos E13009L MNS fast switch with excellent current gain and switching speed

Key Attributes
Model Number: E13009L-MNS
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
1mA
Pd - Power Dissipation:
100W
Transition Frequency(fT):
4MHz
Type:
-
Current - Collector(Ic):
12A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
E13009L-MNS
Package:
TO-3P
Product Description

Product Overview

This high-voltage fast switch is designed for high-power applications. It offers robust performance with specific voltage and current ratings suitable for demanding switching tasks. The device is characterized by its high current gain and fast switching times, making it ideal for power electronics circuits.

Product Attributes

  • Brand: MNS (derived from www.mns-kx.com)
  • Origin: Shenzhen Minos (derived from contact information)
  • Package Type: TO-3P

Technical Specifications

Parameter Symbol Description Min Typical Max Unit Test Conditions
Absolute Maximum Ratings (Ta=25)
Storage Temperature Tstg -65 150
Junction Temperature Tj 150
Collector Power Dissipation (Tc=25 ) PC 100 W
Collector-Base Voltage VCBO 700 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 9 V
Collector Current (DC) IC 12 A
Base Current IB 6 A
Electrical Characteristics (Ta=25)
Collector-Emitter Breakdown Voltage BVCEO 400 V IC=10mA, IB=0
Emitter-Base Cutoff Current IEBO 1 mA VEB=9V, IC=0
DC Current Gain HFE(1) 8 40 VCE=5V, IC=3A
DC Current Gain HFE(2) 6 30 VCE=5V, IC=5A
Collector-Emitter Saturation Voltage VCE(sat) 1 V IC=5A, IB=1A
Collector-Emitter Saturation Voltage VCE(sat) 1.5 V IC=8A, IB=1.6A
Collector-Emitter Saturation Voltage VCE(sat) 3 V IC=12A, IB=3A
Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC=5A, IB=1A
Base-Emitter Saturation Voltage VBE(sat) 1.6 V IC=8A, IB=1.6A
Common-Base Output Capacitance Cob 180 pF VCB=10Vf=0.1MHz
Characteristic Frequency fT 4 MHz VCE=10VIC=0.5A
Turn-on Time tON 1.1 S Vcc=125V,Ic=8A
Storage Time tSTG 3.0 S IB1=IB2=1.6A
Fall Time tF 0.7 S
Pinout (TO-3P)
Pin 1 B Base
Pin 2 C Collector
Pin 3 E Emitter

Notes:

  • Exceeding the maximum ratings of the device may cause permanent failure and affect dependability. Design circuits to avoid exceeding absolute maximum ratings.
  • When installing a heat sink, pay attention to torsional moment and smoothness.
  • MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
  • Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.

Contact:

Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, 4026 Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777


2412110943_Minos-E13009L-MNS_C42411366.pdf

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