MCC SI2321 TP MOSFET Device Featuring Lead Free Finish RoHS Compliance and Halogen Free Construction
Key Attributes
Model Number:
SI2321-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.9A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
900mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 P-Channel
Output Capacitance(Coss):
109pF
Input Capacitance(Ciss):
770pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
9.3nC@4.5V
Mfr. Part #:
SI2321-TP
Package:
SOT-23
Product Description
Product Overview
The SI2321 is a high-performance MOSFET designed for various applications. It offers excellent stability and uniformity, making it a reliable choice for demanding environments. This device is Halogen Free, "Green" compliant, and meets UL 94 V-0 flammability rating, ensuring environmental responsibility and safety. It is also Lead Free Finish/RoHS Compliant, with the "P" suffix designating RoHS compliance.
Product Attributes
- Brand: MCCSEMI.COM
- Certifications: Halogen Free, "Green" Device, UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | -4.1 | A | ||
| Continuous Drain Current | ID | TA=100C | -3.3 | A | ||
| Pulsed Drain Current | IDM | Note 3 | -16 | A | ||
| Total Power Dissipation | PD | Note 4 | 1.1 | W | ||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Junction to Ambient Thermal Resistance | RJA | Note 2 | 108 | C/W | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-10A | -20 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =12V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-16V, VGS=0V | -1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.4 | -0.9 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-3.3A | 770 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS=-2.5V, ID=-2.8A | 109 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS=-1.8V, ID=-2.3A | 95 | m | ||
| Gate Resistance | RG | f=1 MHz, Open drain | 14 | |||
| Continuous Body Diode Current | IS | -4.1 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1.6A | -1.2 | V | ||
| Reverse Recovery Time | trr | IF=-4.1A, dIF/dt=100A/s | 38 | ns | ||
| Reverse Recovery Charge | Qrr | IF=-4.1A, dIF/dt=100A/s | 22 | nC | ||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | 770 | pF | ||
| Output Capacitance | Coss | VDS=-10V,VGS=0V,f=1MHz | 109 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V,f=1MHz | 95 | pF | ||
| Total Gate Charge | Qg | VDD=-4V, VGS=-4.5V, RGEN=1, ID= -3.3A | 14 | nC | ||
| Gate-Source Charge | Qgs | VDD=-4V, VGS=-4.5V, RGEN=1, ID= -3.3A | 8.6 | nC | ||
| Gate-Drain Charge | Qgd | VDD=-4V, VGS=-4.5V, RGEN=1, ID= -3.3A | 12 | nC | ||
| Turn-On Delay Time | td(on) | VDS=-10V,VGS=-4.5V,ID=-4A | 61 | ns | ||
| Turn-On Rise Time | tr | VDS=-10V,VGS=-4.5V,ID=-4A | 26 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=-10V,VGS=-4.5V,ID=-4A | 9.3 | ns | ||
| Turn-Off Fall Time | tf | VDS=-10V,VGS=-4.5V,ID=-4A | 1.1 | ns | ||
| Forward Tranconductance | gFS | VDS=-5V, ID=-3.3A | 16 | S |
Device Packing
| Part Number | Packing | Quantity |
|---|---|---|
| SI2321 | TP Tape&Reel | 3Kpcs/Reel |
2411220451_MCC-SI2321-TP_C914368.pdf
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