Power MOSFET MCC MCMN2012-TP featuring TrenchFET construction and halogen free RoHS compliant design

Key Attributes
Model Number: MCMN2012-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
10mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
450pF@4V
Number:
1 N-channel
Input Capacitance(Ciss):
1.8nF@4V
Pd - Power Dissipation:
-
Gate Charge(Qg):
32nC@5V
Mfr. Part #:
MCMN2012-TP
Package:
U-DFN2020-6
Product Description

Product Overview

The MCMN2012 is an N-Channel Power MOSFET designed for various electronic applications. It features a TrenchFET construction, meeting UL 94 V-0 flammability rating, and is Halogen Free and RoHS Compliant. This device is suitable for applications requiring efficient power switching and management.

Product Attributes

  • Brand: MCC
  • Product Line: MCMN2012
  • Construction: TrenchFET Power MOSFET
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Environmental Compliance: Halogen Free. Green Device, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 10 V
Drain Current Rating ID 40 A
Drain Current-Pulse IDM (Note 3) A
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Maximum Thermal Resistance (Junction to Ambient) (Note 2) 167 C/W
Electrical Characteristics (Ta=25 unless otherwise specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 20 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A (Note 4) 0.35 0.7 1.0 V
Gate-Body Leakage Current IGSS VGS = 10V, VDS =0V 100 nA
Zero Gate Voltage Drain Current IDSS VDS =20V, VGS =0V 1 A
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=5A 10 15 m
VGS=2.5V, ID=5A 13 18 m
VGS=1.8V, ID=5A 18 30 m
Forward Tranconductance gFS VDS=4V, ID=9.7A (Note 4) 20 S
Diode Forward Voltage VSD VGS=0V, IS=10A 1.2 V
Input Capacitance Ciss VDS=4V,VGS=0V, f=1MHz 1800 pF
Output Capacitance Coss VDS=4V,VGS=0V, f=1MHz 650 pF
Reverse Transfer Capacitance Crss VDS=4V,VGS=0V, f=1MHz 450 pF
Gate Resistance Rg 2.5
Switching Characteristics (Note 5)
Turn-On Delay Time td(on) VDD=4V,VGEN=4.5V,RL=0.4, ID=10A,RG=1 12 20 ns
Turn-On Rise Time tr VDD=4V,VGEN=4.5V,RL=0.4, ID=10A,RG=1 10 15 ns
Turn-Off Delay Time td(off) VDD=4V,VGEN=4.5V,RL=0.4, ID=10A,RG=1 65 100 ns
Turn-Off Fall Time tf VDD=4V,VGEN=4.5V,RL=0.4, ID=10A,RG=1 20 30 ns
Total Gate Charge Qg VDS=4V,Vgs=5V,ID=10A 32 nC
Gate-Source Charge Qgs VDS=4V,Vgs=5V,ID=10A 2.5 nC
Gate-Drain Charge Qg VDS=4V,Vgs=5V,ID=10A 6.5 nC
Dimensions (DFN2010-6J)
DIM INCHES MM TYP.
A 0.028 - 0.032 0.700 - 0.800
B 0.000 - 0.002 0.000 - 0.050
C 0.076 - 0.082 1.924 - 2.076
D 0.076 - 0.082 1.924 - 2.076
E 0.031 - 0.039 0.800 - 1.000
F 0.033 - 0.041 0.850 - 1.050
G 0.008 - 0.016 0.200 - 0.400
H 0.008 ----- 0.200 -----
J 0.018 - 0.026 0.460 - 0.660
K 0.010 - 0.014 0.250 - 0.350
L 0.007 - 0.013 0.174 - 0.326
M 0.008 0.203 TYP.
N 0.026 0.650 TYP.

Notes:

  • 1. Halogen free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  • 2. Surface Mounted On FR4 Board Using The Minimum Pad Size, 1oz Copper.
  • 3. Surface Mounted On FR4 Board Using 1 Square Inch Pad Size, 1oz Copper.
  • 4. Pulse Test: Pulse Width300s, Duty Cycle2%.
  • 5. These Parameters Have No Way To Verify.

Ordering Information

Device Packing Part Number
MCMN2012 Tape&Reel:3Kpcs/Reel -TP

2410121951_MCC-MCMN2012-TP_C778953.pdf

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