PNP Epitaxial Power Transistor Minos TTA1943 Recommended for Output Stage of High Fidelity Audio Amplifiers
Key Attributes
Model Number:
TTA1943
Product Custom Attributes
Current - Collector Cutoff:
10uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
150W
Transition Frequency(fT):
30MHz
Type:
PNP
Current - Collector(Ic):
15A
Collector - Emitter Voltage VCEO:
230V
Operating Temperature:
-
Mfr. Part #:
TTA1943
Package:
TO-3PL
Product Description
Product Overview
The TTA1943 is a Minos Silicon PNP Epitaxial Type transistor designed for power amplifier applications. It serves as a complementary component to the TTC5200 and is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers. Key features include a high collector voltage of -230V (min).
Product Attributes
- Brand: Minos Silicon
- Type: PNP Epitaxial
- Model: TTA1943
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Collector-base voltage | VCBO | -230 | V | |
| Collector-emitter voltage | VCEO | -230 | V | |
| Emitter-base voltage | VEBO | -5 | V | |
| Collector current | IC | -15 | A | |
| Base current | IB | -1.5 | A | |
| Collector power dissipation (Tc=25) | PC | 150 | W | (Tc=25) |
| Junction temperature | Tj | 150 | ||
| Storage temperature range | TSTG | -55~150 | ||
| Collector cut-off current | ICBO | -10.0 | uA | VCB=-230V; IE=0 |
| Emitter cut-off current | IEBO | -10.0 | uA | VEB=-5V; Ic=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -230 | V | IC=-50mA;IB=0 |
| DC current gain | hFE | 80~160 | IC=-5A; VCE=-1V | |
| DC current gain (hFE(2)) | hFE(2) | 35 | IC=-5A; VCE=-7V | |
| Collector-emitter saturation voltage | VCE(sat) | -3.0 | V | IC=-8A; IB=-0.8A |
| Base-emitter voltage | VBE | -1.5 | V | VCE=-5V;IC=-7A |
| Transition frequency | fT | 30 | MHz | VCE=-5V;IC=-1A |
| Junction-to-Case Thermal Resistance | RJC | 0.35 | /W |
Package Information
TO-3PL PACKAGE
2409302201_Minos-TTA1943_C5366139.pdf
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