Power MOSFET MATSUKI ME50N75T N-Channel 75 Volt 50 Ampere Featuring High Cell Density and DMOS Trench
Key Attributes
Model Number:
ME50N75T
Product Custom Attributes
Drain To Source Voltage:
75V
Current - Continuous Drain(Id):
42A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
22mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
59pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.27nF@15V
Pd - Power Dissipation:
105W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
ME50N75T
Package:
TO-220
Product Description
Product Overview
The ME50N75T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for power management, DC/DC converters, and load switch applications.
Product Attributes
- Brand: ME (implied by product name)
- Origin: Not specified
- Material: Not specified
- Color: Not specified (ME50N75T is Pb-free, ME50N75T-G is Green product-Halogen free)
- Certifications: Pb-free (ME50N75T), Green product-Halogen free (ME50N75T-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | VDSS | 75 | V | |
| Gate-Source Voltage | VGSS | ±25 | V | |
| Continuous Drain Current (Tc=25) | ID | 50 | A | |
| Continuous Drain Current (TC=70) | ID | 42 | A | |
| Pulsed Drain Current | IDM | 200 | A | |
| Maximum Power Dissipation (TC=25) | PD | 150 | W | |
| Maximum Power Dissipation (TC=70) | PD | 105 | W | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | ||
| Thermal Resistance-Junction to Case* | RJC | 1 | /W | * The device mounted on 1in2 FR4 board with 2 oz copper. |
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | 75 | V | |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 2.0 | 4.0 | V |
| Gate-Body Leakage (VDS=0V, VGS=±20V) | IGSS | ±100 | nA | |
| Zero Gate Voltage Drain Current (VDS=75V, VGS=0V) | IDSS | 1 | μA | |
| Drain-Source On-Resistance (VGS=10V, ID=30A) | RDS(ON) | 22 | 26 | mΩ |
| Diode Forward Voltage (IS=30A, VGS=0V) | VSD | 0.9 | 1.2 | V |
| Total Gate Charge (VDS=48V, VGS=10V, ID=50A) | Qg | 38 | nC | |
| Total Gate Charge (VDS=48V, VGS=4.5V, ID=50A) | Qg | 11 | nC | |
| Gate-Source Charge | Qgs | 13 | nC | |
| Gate-Drain Charge | Qgd | 9 | nC | |
| Gate Resistance | Rg | 2 | Ω | VDS=0V, VGS=0V, f=1MHz |
| Input Capacitance (VDS=15V, VGS=0V, f=1MHz) | Ciss | 2270 | pF | |
| Output Capacitance | Coss | 189 | pF | |
| Reverse Transfer Capacitance | Crss | 59 | pF | |
| Turn-On Delay Time (VDD=30V, RL=30Ω, VGS =10V, RG=3.6Ω) | td(on) | 28 | ns | |
| Turn-On Rise Time | tr | 5 | ns | |
| Turn-Off Delay Time | td(off) | 51 | ns | |
| Turn-Off Fall Time | Tf | 6 | ns |
2411220246_MATSUKI-ME50N75T_C704955.pdf
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