80A Forward Current Soft Recovery Diode Minos F80UP40DN for High Frequency Power Conditioning and Snubber Circuits
Key Attributes
Model Number:
F80UP40DN
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600A
Reverse Leakage Current (Ir):
30uA
Reverse Recovery Time (trr):
26ns
Voltage - DC Reverse (Vr) (Max):
400V
Operating Junction Temperature Range:
-
Voltage - Forward(Vf@If):
1.2V
Current - Rectified:
80A
Mfr. Part #:
F80UP40DN
Package:
TO-3P
Product Description
Product Overview
This FRD Ultrafast Soft Recovery Diode, 80A is optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. Its soft recovery behavior serves as a snubber in many applications, making it ideal for HF welding power converters and other scenarios where switching losses are not a significant factor.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos (implied from contact information)
Technical Specifications
| Parameter | Symbol | Test Conditions | Values | Units |
| Repetitive peak reverse voltage | VRRM | 400 | V | |
| Continuous forward current | IF(AV) | Tc =110C | 80 | A |
| Single pulse forward current | IFSM | Tc =25C | 600 | |
| Maximum repetitive forward current | IFRM | Square wave, 20kHZ | 160 | |
| Operating junction | Tj | 175 | C | |
| Storage temperatures | Tstg | -55 to +175 | C | |
| Breakdown voltage | VBR, VR | IR=100A | 400 | V |
| Forward voltage (Per Diode) | VF | IF=40A | 1.20 - 1.60 | |
| Forward voltage (Per Diode) | VF | IF=40A, Tj =125C | 1.10 - 1.40 | |
| Reverse leakage current(Per Diode) | IR | VR= VRRM | 30 | A |
| Reverse leakage current(Per Diode) | IR | Tj=150C, VR=400V | 300 | |
| Reverse recovery time(Per Diode) | trr | IF=0.5A, IR=1A, IRR=0.25A | 26 - 55 | ns |
| Reverse recovery time(Per Diode) | trr | IF=1A,VR=30V, di/dt =200A/us | 26 - 40 | ns |
| Junction-to-Case | RJC | 0.8 | /W |
Features
- Ultrafast Recovery
- 175C operating junction temperature
- High frequency operation
- Low power loss, less RFI and EMI
- Low IR value
- High surge capacity
- Epitaxial chip construction
Package Description: TO-3P
| Symbol | Dimensions(millimeter) | |
| Min. | Max. | |
| A | 4.60 | 5.00 |
| A1 | 1.30 | 1.70 |
| A2 | 2.20 | 2.60 |
| b | 0.80 | 1.20 |
| b1 | 2.90 | 3.30 |
| b2 | 1.90 | 2.30 |
| c | 0.40 | 0.80 |
| e | 5.25 | 5.65 |
| E | 15.3 | 15.7 |
| E1 | 13.2 | 13.6 |
| E2 | 13.1 | 13.5 |
| E3 | 9.10 | 9.50 |
| H | 19.7 | 20.1 |
| H1 | 19.1 | 20.1 |
| H2 | 18.3 | 18.7 |
| H3 | 2.80 | 3.20 |
| G | 4.80 | 5.20 |
| P | 3.00 | 3.40 |
2410171639_Minos-F80UP40DN_C41433070.pdf
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