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quality MCC SI2310AHE3 TP SOT 23 Package N Channel Transistor with AEC Q101 and Moisture Sensitivity Level 1 factory
quality MCC SI2310AHE3 TP SOT 23 Package N Channel Transistor with AEC Q101 and Moisture Sensitivity Level 1 factory

MCC SI2310AHE3 TP SOT 23 Package N Channel Transistor with AEC Q101 and Moisture Sensitivity Level 1

Key Attributes
Model Number: SI2310AHE3-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
120mΩ@4.5V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
41pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
409pF@10V
Gate Charge(Qg):
10.27nC@10V
Mfr. Part #:
SI2310AHE3-TP
Package:
SOT-23
Product Description

Product Overview

The SI2310AHE3 is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features AEC-Q101 Qualification, Lead Free Finish/RoHS Compliance, and meets UL 94 V-0 Flammability Rating. This device is also Moisture Sensitivity Level 1 and Halogen Free. Key electrical characteristics include a Drain-Source Breakdown Voltage of 60V, a continuous Drain Current (ID) of 3.0A, and a Pulsed Drain Current (IDM) of 10A. The transistor is housed in a SOT-23 package.

Product Attributes

  • Brand: MCCSEMI.COM
  • Model: SI2310AHE3
  • Type: N-Channel Enhancement Mode Field Effect Transistor
  • Qualification: AEC-Q101
  • Compliance: Lead Free Finish/RoHS Compliant
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Environmental: Halogen Free. Green Device
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 60 V
Gate-Source Voltage VGS 20 V
Drain Current ID 3.0 A
Pulsed Drain Current (Note 3) IDM 10 A
Total Power Dissipation PD 1.2 W
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Thermal Resistance Junction to Ambient (Note 2) Device Mounted on FR-4 PCB, 1 inch pad of 2oz copper. 105 C/W
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 A
Gate-Threshold Voltage (Note 4) VGS(th) VDS=VGS, ID=250A 0.90 2.0 V
Drain-Source On-Resistance (Note 4) RDS(on) VGS=10V, ID=3A 100 m
Drain-Source On-Resistance (Note 4) RDS(on) VGS=4.5V, ID=2A 120 m
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Gate-Source Leakage Current IGSS VDS=0V, VGS =10V 50 nA
Diode Forward Voltage (Note 4) VSD VGS=0V, IS=3A 1.2 V
Input Capacitance Ciss VDS=10V,VGS=0V,f=1MHz 409 pF
Output Capacitance Coss VDS=30V,VGS=10V,ID=3A 50 pF
Reverse Transfer Capacitance Crss VGS=10V,VDS=30V, RL=20,RG=3 41 pF
Total Gate Charge Qg ISD=3A, di/dt=100A/us 10.27 nC
Gate-Source Charge Qgs 1.65 nC
Gate-Drain Charge Qg 2.11 nC
Reverse Recovery Charge Qrr 6.99 nC
Reverse Recovery Time Trr 32.6 ns
Turn-On Delay Time td(on) 3.6 ns
Turn-On Rise Time tr 17.6 ns
Turn-Off Delay Time td(off) 13 ns
Turn-Off Fall Time tf 23 ns

Notes:

  • 1. Halogen free Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  • 2. Device Mounted on FR-4 PCB, 1 inch pad of 2oz copper.
  • 3. Repetitive Rating: Pulse Width Limited by Junction Temperature.
  • 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
  • 5. Switching characteristics are independent of operating junction temperature.
  • 6. Guaranteed by Design, Not Subject to Production Testing.

Ordering Information

Device Packing Part Number
SI2310AHE3 Tape&Reel: 3Kpcs/Reel -TP

2409302331_MCC-SI2310AHE3-TP_C5243799.pdf

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