MMDT4413 TP MCC NPN PNP Transistor with Epitaxial Planar Die Construction and Halogen Free Compliance
Key Attributes
Model Number:
MMDT4413-TP
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMDT4413-TP
Package:
SOT-363
Product Description
MMDT4413 NPN/PNP Plastic-Encapsulate Transistors
The MMDT4413 is a versatile NPN/PNP transistor housed in a SOT-363 package. It features epitaxial planar die construction, halogen-free "Green" device compliance, and meets UL 94 V-0 flammability rating. This device is suitable for various electronic applications requiring reliable switching and amplification characteristics.
Product Attributes
- Brand: MCCSEMI
- Package Type: SOT-363
- Construction: Epitaxial Planar Die
- Certifications: Halogen Free ("Green" Device), UL 94 V-0 Flammability Rating, RoHS Compliant
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions | NPN Min | NPN Typ | NPN Max | PNP Min | PNP Typ | PNP Max |
|---|---|---|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | V | -40 | ||||||
| Emitter-Base Voltage | VEBO | 6 | V | -5 | ||||||
| Collector-Base Voltage | VCBO | V | -40 | |||||||
| Continuous Collector Current | IC | 600 | mA | -600 | ||||||
| Power Dissipation | PD | 200 | mW | 200 | ||||||
| Thermal Resistance Junction to Ambient | RJA | 625 | C/W | 625 | ||||||
| Collector Cutoff Current | ICBO | 100 | nA | VCB=50V, IE=0 | -100 | |||||
| Base-Emitter Saturation Voltage | VBE(sat) | V | IC=150mA, IB=15mA | 0.75 | 0.95 | -0.75 | -0.95 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=500mA, IB=50mA | 0.4 | -0.75 | |||||
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | V | IC=100A, IE=0 | -40 | |||||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | -5 | ||||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | -40 | ||||||
| Emitter Cutoff Current | IEBO | 100 | nA | VEB=5V, IC=0 | -100 | |||||
| DC Current Gain | hFE | VCE=1V, IC=10mA | 100 | 300 | 30 | |||||
| DC Current Gain | hFE | VCE=1V, IC=150mA | 40 | 225 | 60 | 100 | ||||
| DC Current Gain | hFE | VCE=2V, IC=500mA | 20 | 20 | ||||||
| Transition Frequency | fT | 250 | MHz | VCE=10V, IC=20mA, f=100MHz | 200 | |||||
| Output Capacitance | Cob | 6.5 | pF | VCB=5V, IE=0, f=1MHz | 8.5 | |||||
| Delay Time | td | 15 | ns | VCC=30V, IC=150mA, IB1=15mA | 15 | |||||
| Rise Time | tr | 20 | ns | VCC=30V, IC=150mA, VBE=2V, IB1=15mA | 20 | |||||
| Storage Time | ts | 225 | ns | VCC=30V, IC=150mA, IB1=-IB2=15mA | 225 | |||||
| Fall Time | tf | 30 | ns | 30 |
2409302201_MCC-MMDT4413-TP_C7463927.pdf
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