MCC SI2324A TP N Channel Power MOSFET featuring TrenchFET technology and RoHS compliant green device
Key Attributes
Model Number:
SI2324A-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
250mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
36pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
520pF@15V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
4.8nC@4.5V
Mfr. Part #:
SI2324A-TP
Package:
SOT-23
Product Description
Product Overview
The SI2324A is an N-Channel Power MOSFET featuring TrenchFET technology for low on-resistance (RDS(ON)). This device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, designated as a "Green" Device. It is also Lead Free and RoHS Compliant. The MOSFET operates within a wide temperature range and is suitable for various applications requiring efficient power switching.
Product Attributes
- Brand: MCCSEMI.COM
- Model: SI2324A
- Technology: TrenchFET Power MOSFET
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Environmental: Halogen Free ("Green" Device), Lead Free Finish/RoHS Compliant
- Packaging: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 2.0 | A | |||
| Power Dissipation | PD | 1.2 | W | |||
| Operating Junction Temperature Range | -55 | +150 | °C | |||
| Storage Temperature Range | -55 | +150 | °C | |||
| Thermal Resistance (Junction to Ambient) | 105 | °C/W | ||||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 100 | V | ||
| Gate-Threshold Voltage (Note 2) | VGS(th) | VDS=VGS, ID=250µA | 1.0 | 2.0 | V | |
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | µA | ||
| Drain-Source On-Resistance (Note 2) | RDS(on) | VGS=10V, ID=2.0A | 280 | mΩ | ||
| Forward Transconductance | gFS | VDS=5V, ID=2.0A | 2.0 | S | ||
| Static Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 520 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1MHz | 130 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHz | 36 | pF | ||
| Dynamic Characteristics (Note 3) | ||||||
| Turn-On Delay Time | td(on) | VDD=10V,RL=2.8Ω,VGS=4.5V, ID=1A,RGEN=6Ω | 12 | ns | ||
| Turn-On Rise Time | tr | VDD=10V,RL=2.8Ω,VGS=4.5V, ID=1A,RGEN=6Ω | 250 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=10V,RL=2.8Ω,VGS=4.5V, ID=1A,RGEN=6Ω | 260 | ns | ||
| Turn-Off Fall Time | tf | VDD=10V,RL=2.8Ω,VGS=4.5V, ID=1A,RGEN=6Ω | 1.5 | ns | ||
| Total Gate Charge | Qg | VDS=10V,VGS=4.5V,ID=2A | 4.8 | nC | ||
| Gate-Source Charge | Qgs | VDS=10V,VGS=4.5V,ID=2A | 1.2 | nC | ||
| Gate-Drain Charge | Qgd | VDS=10V,VGS=4.5V,ID=2A | 1.7 | nC | ||
| Switching Characteristics (Note 3) | ||||||
| Turn-Off Fall Time | tf | VDS=10V,VGS=4.5V,ID=2A | 1.5 | ns | ||
| Source-Drain Diode characteristics | ||||||
| Drain-Source Diode Forward Current | Is | VGS=0V,IS=2A | 2.0 | A | ||
| Diode Forward voltage | VSD | VGS=0V,IS=2A | 0.9 | 1.2 | V | |
| Dimensions (Inches/mm) | ||||||
| Dimension | MIN (in) | MAX (in) | MIN (mm) | MAX (mm) | ||
| A | 0.110 | 0.120 | 2.80 | 3.04 | ||
| B | 0.083 | 0.104 | 2.10 | 2.64 | ||
| C | 0.047 | 0.055 | 1.20 | 1.40 | ||
| D | 0.034 | 0.041 | 0.85 | 1.05 | ||
| E | 0.067 | 0.083 | 1.70 | 2.10 | ||
| F | 0.018 | 0.024 | 0.45 | 0.60 | ||
| G | 0.0004 | 0.006 | 0.01 | 0.15 | ||
| H | 0.035 | 0.043 | 0.90 | 1.10 | ||
| J | 0.003 | 0.007 | 0.08 | 0.18 | ||
| K | 0.012 | 0.020 | 0.30 | 0.51 | ||
| L | 0.020 | 0.50 | ||||
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| SI2324A | Tape&Reel: 3Kpcs/Reel | -TP |
2410121951_MCC-SI2324A-TP_C779229.pdf
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