Halogen Free N Channel MOSFET MCC MCAC38N10YHE3 TP with AEC Q101 Qualification and Split Gate Design

Key Attributes
Model Number: MCAC38N10YHE3-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
38A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
19mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
8pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
1.15nF@50V
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
MCAC38N10YHE3-TP
Package:
DFN5060
Product Description

Product Overview

The MCAC38N10YHE3 is an N-Channel MOSFET featuring AEC-Q101 qualification, Split Gate Trench MOSFET Technology, and an excellent package for heat dissipation. Its high-density cell design ensures low RDS(ON). This device is Halogen Free, RoHS Compliant, and meets UL 94 V-0 flammability rating. It is designed for applications requiring reliable performance and efficient thermal management.

Product Attributes

  • Brand: MCC
  • Technology: Split Gate Trench MOSFET
  • Certifications: AEC-Q101 Qualified
  • Environmental Compliance: Halogen Free, RoHS Compliant, UL 94 V-0 Flammability Rating
  • Package Type: DFN5060

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 38 A
Pulsed Drain Current IDM Pulse width limited by max. junction temperature 120 A
Total Power Dissipation PD Based on max. junction temperature, using junction-case thermal resistance W
Single Pulsed Avalanche Energy EAS TJ=25, VDD=50V, RG=25, L=0.5mH 81 mJ
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Thermal Resistance Junction to Ambient (t10s) RJA Device mounted on 1in FR-4 board with 2oz. Copper, TA =25C 20 C/W
Thermal Resistance Junction to Ambient (Steady-State) RJA Device mounted on 1in FR-4 board with 2oz. Copper, TA =25C 50 C/W
Thermal Resistance Junction to Case (Steady-State) RJC 1.8 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1 1.8 2.5 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 15 19 m
VGS=4.5V, ID=20A 18 23 m
Continuous Body Diode Current IS 38 A
Diode Forward Voltage VSD VGS=0V, IS=20A 1.3 V
Reverse Recovery Time trr IF=20A, dIF/dt=100A/s 39.8 ns
Reverse Recovery Charge Qrr IF=20A, dIF/dt=100A/s 42 nC
Input Capacitance Ciss VDS=50V,VGS=0V,f=1MHz 1150 pF
Output Capacitance Coss VDS=50V,VGS=0V,f=1MHz 370 pF
Reverse Transfer Capacitance Crss VDS=50V,VGS=0V,f=1MHz 370 pF
Total Gate Charge Qg VDD=50V, VGS=10V, RGEN=2.2, IDS=25A 16 nC
Gate-Source Charge Qgs VDD=50V, VGS=10V, RGEN=2.2, IDS=25A 5.6 nC
Gate-Drain Charge Qg VDD=50V, VGS=10V, RGEN=2.2, IDS=25A 2.4 nC
Turn-On Delay Time td(on) VDD=50V, VGS=10V, RGEN=2.2, IDS=25A 39.2 ns
Turn-On Rise Time tr VDD=50V, VGS=10V, RGEN=2.2, IDS=25A 11 ns
Turn-Off Delay Time td(off) VDD=50V, VGS=10V, RGEN=2.2, IDS=25A 53.2 ns
Turn-Off Fall Time tf VDD=50V, VGS=10V, RGEN=2.2, IDS=25A 15.8 ns
DIM INCHES MM NOTE
A 0.031 - 0.047 0.80 - 1.20
B 0.193 - 0.222 4.90 - 5.64
C 0.232 - 0.250 5.90 - 6.35
D 0.148 - 0.167 3.75 - 4.25
E 0.126 - 0.154 3.20 - 3.92
F 0.189 - 0.213 4.80 - 5.40
G 0.222 - 0.239 5.65 - 6.06
H 0.045 - 0.059 1.15 - 1.50
K 0.012 - 0.020 0.30 - 0.50
J 0.046 - 0.054 1.17 - 1.37
L 0.012 - 0.028 0.30 - 0.71
M 0.016 - 0.028 0.40 - 0.71
N 0.254 TYP. 0.010 TYP. PIN 1

Ordering Information:

Device Packing Part Number
MCAC38N10YHE3 Tape&Reel: 5Kpcs/Reel MCAC38N10YHE3-TP

2410010204_MCC-MCAC38N10YHE3-TP_C6989639.pdf

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