Halogen Free N Channel MOSFET MCC MCAC38N10YHE3 TP with AEC Q101 Qualification and Split Gate Design
Product Overview
The MCAC38N10YHE3 is an N-Channel MOSFET featuring AEC-Q101 qualification, Split Gate Trench MOSFET Technology, and an excellent package for heat dissipation. Its high-density cell design ensures low RDS(ON). This device is Halogen Free, RoHS Compliant, and meets UL 94 V-0 flammability rating. It is designed for applications requiring reliable performance and efficient thermal management.
Product Attributes
- Brand: MCC
- Technology: Split Gate Trench MOSFET
- Certifications: AEC-Q101 Qualified
- Environmental Compliance: Halogen Free, RoHS Compliant, UL 94 V-0 Flammability Rating
- Package Type: DFN5060
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 38 | A | |||
| Pulsed Drain Current | IDM | Pulse width limited by max. junction temperature | 120 | A | ||
| Total Power Dissipation | PD | Based on max. junction temperature, using junction-case thermal resistance | W | |||
| Single Pulsed Avalanche Energy | EAS | TJ=25, VDD=50V, RG=25, L=0.5mH | 81 | mJ | ||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance Junction to Ambient (t10s) | RJA | Device mounted on 1in FR-4 board with 2oz. Copper, TA =25C | 20 | C/W | ||
| Thermal Resistance Junction to Ambient (Steady-State) | RJA | Device mounted on 1in FR-4 board with 2oz. Copper, TA =25C | 50 | C/W | ||
| Thermal Resistance Junction to Case (Steady-State) | RJC | 1.8 | C/W | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 15 | 19 | m | |
| VGS=4.5V, ID=20A | 18 | 23 | m | |||
| Continuous Body Diode Current | IS | 38 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=20A | 1.3 | V | ||
| Reverse Recovery Time | trr | IF=20A, dIF/dt=100A/s | 39.8 | ns | ||
| Reverse Recovery Charge | Qrr | IF=20A, dIF/dt=100A/s | 42 | nC | ||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHz | 1150 | pF | ||
| Output Capacitance | Coss | VDS=50V,VGS=0V,f=1MHz | 370 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=50V,VGS=0V,f=1MHz | 370 | pF | ||
| Total Gate Charge | Qg | VDD=50V, VGS=10V, RGEN=2.2, IDS=25A | 16 | nC | ||
| Gate-Source Charge | Qgs | VDD=50V, VGS=10V, RGEN=2.2, IDS=25A | 5.6 | nC | ||
| Gate-Drain Charge | Qg | VDD=50V, VGS=10V, RGEN=2.2, IDS=25A | 2.4 | nC | ||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V, RGEN=2.2, IDS=25A | 39.2 | ns | ||
| Turn-On Rise Time | tr | VDD=50V, VGS=10V, RGEN=2.2, IDS=25A | 11 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=50V, VGS=10V, RGEN=2.2, IDS=25A | 53.2 | ns | ||
| Turn-Off Fall Time | tf | VDD=50V, VGS=10V, RGEN=2.2, IDS=25A | 15.8 | ns |
| DIM | INCHES | MM | NOTE |
|---|---|---|---|
| A | 0.031 - 0.047 | 0.80 - 1.20 | |
| B | 0.193 - 0.222 | 4.90 - 5.64 | |
| C | 0.232 - 0.250 | 5.90 - 6.35 | |
| D | 0.148 - 0.167 | 3.75 - 4.25 | |
| E | 0.126 - 0.154 | 3.20 - 3.92 | |
| F | 0.189 - 0.213 | 4.80 - 5.40 | |
| G | 0.222 - 0.239 | 5.65 - 6.06 | |
| H | 0.045 - 0.059 | 1.15 - 1.50 | |
| K | 0.012 - 0.020 | 0.30 - 0.50 | |
| J | 0.046 - 0.054 | 1.17 - 1.37 | |
| L | 0.012 - 0.028 | 0.30 - 0.71 | |
| M | 0.016 - 0.028 | 0.40 - 0.71 | |
| N | 0.254 TYP. | 0.010 TYP. | PIN 1 |
Ordering Information:
| Device | Packing | Part Number |
|---|---|---|
| MCAC38N10YHE3 | Tape&Reel: 5Kpcs/Reel | MCAC38N10YHE3-TP |
2410010204_MCC-MCAC38N10YHE3-TP_C6989639.pdf
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