P Channel MOSFET MCC MCG10P03 TP with Ultra Low RDS on and Lead Free Finish RoHS Compliant Device

Key Attributes
Model Number: MCG10P03-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@2.5V,5A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
190pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.55nF@15V
Pd - Power Dissipation:
20W
Gate Charge(Qg):
-
Mfr. Part #:
MCG10P03-TP
Package:
DFN3030-8
Product Description

Product Overview

The MCG10P03 is a P-Channel MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current capabilities, making it suitable for various applications. The device is constructed with epoxy that meets UL 94 V-0 flammability rating, is moisture sensitivity level 1 compliant, and is halogen-free and RoHS compliant. Its robust design ensures reliable performance across a wide operating temperature range.

Product Attributes

  • Brand: MCCSEMI
  • Product Series: MCG10P03
  • Channel Type: P-Channel
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Environmental Compliance: Halogen Free, "Green" Device, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID TC=25°C -7.5 A
Continuous Drain Current ID TC=100°C - -4.7 A
Pulsed Drain Current IDM (Note 3) -40 A
Single Pulse Avalanche Energy EAS (Note 4) 20 mJ
Total Power Dissipation PD TC=25°C 75 W
Operating Junction Temperature Range -55 +150 °C
Storage Temperature Range -55 +150 °C
Thermal Resistance Junction to Case (Note 2) 6.25 °C/W
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA -33 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =±12V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 µA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250µA (Note 5) -0.6 -0.9 -1.5 V
Drain-Source On-Resistance RDS(on) VGS=-4.5V, ID=-10A (Note 5) 20 26
Drain-Source On-Resistance RDS(on) VGS=-2.5V, ID=-5A (Note 5) 28 38
Forward Tranconductance gFS VDS=-15V, ID=-10A (Note 5) 10 S
Dynamic Characteristics (Note 6)
Input Capacitance Ciss VDS=-15V,VGS=0V,f=1MHz 1550 pF
Output Capacitance Coss 260 pF
Reverse Transfer Capacitance Crss 190 pF
Total Gate Charge Qg VDD=-15V,ID=-1A 27 nC
Gate-Source Charge Qgs VGS=-4.5V,RGEN=6Ω 6 nC
Gate-Drain Charge Qg 7 nC
Turn-On Delay Time td(on) 10 ns
Turn-On Rise Time tr 15 ns
Turn-Off Delay Time td(off) 110 ns
Turn-Off Fall Time tf 70 ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current IS -10 A
Body Diode Voltage VSD ISD=-10A, VGS=0V -0.87 -0.99 V
Reverse Recovery Time trr TJ=25°C, IF=-10A,di/dt=100A/µs 23 33 ns
Reverse Recovery Charge Qrr 12 20 nC
Forward Turn-On Time ton VDS=-15V,VGS=-4.5V,ID=-10A nC

Dimensions (DFN3030)

DIM INCHES MM
A 0.069 - 0.118 1.75 - 3.00
B 0.026 - 0.023 0.65 - 0.575
C 0.118 - 0.126 3.00 - 3.20
D 0.093 2.35
E 0.028 - 0.035 0.70 - 0.90
F 0.000 - 0.002 0.00 - 0.05
G 0.004 - 0.010 0.10 - 0.25
H 0.012 - 0.020 0.30 - 0.50
J 0.009 - 0.014 0.24 - 0.35
K TYP. TYP.
L TYP. TYP.

Ordering Information

Device Packing Part Number
MCG10P03 Tape&Reel: 3Kpcs/Reel MCG10P03-TP

2101051034_MCC-MCG10P03-TP_C712279.pdf

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