P Channel MOSFET MCC MCG10P03 TP with Ultra Low RDS on and Lead Free Finish RoHS Compliant Device
Product Overview
The MCG10P03 is a P-Channel MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current capabilities, making it suitable for various applications. The device is constructed with epoxy that meets UL 94 V-0 flammability rating, is moisture sensitivity level 1 compliant, and is halogen-free and RoHS compliant. Its robust design ensures reliable performance across a wide operating temperature range.
Product Attributes
- Brand: MCCSEMI
- Product Series: MCG10P03
- Channel Type: P-Channel
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free, "Green" Device, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TC=25°C | -7.5 | A | ||
| Continuous Drain Current | ID | TC=100°C | - | -4.7 | A | |
| Pulsed Drain Current | IDM | (Note 3) | -40 | A | ||
| Single Pulse Avalanche Energy | EAS | (Note 4) | 20 | mJ | ||
| Total Power Dissipation | PD | TC=25°C | 75 | W | ||
| Operating Junction Temperature Range | -55 | +150 | °C | |||
| Storage Temperature Range | -55 | +150 | °C | |||
| Thermal Resistance Junction to Case | (Note 2) | 6.25 | °C/W | |||
| Electrical Characteristics @ 25°C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250µA | -33 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =±12V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | µA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA (Note 5) | -0.6 | -0.9 | -1.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-10A (Note 5) | 20 | 26 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS=-2.5V, ID=-5A (Note 5) | 28 | 38 | mΩ | |
| Forward Tranconductance | gFS | VDS=-15V, ID=-10A (Note 5) | 10 | S | ||
| Dynamic Characteristics (Note 6) | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | 1550 | pF | ||
| Output Capacitance | Coss | 260 | pF | |||
| Reverse Transfer Capacitance | Crss | 190 | pF | |||
| Total Gate Charge | Qg | VDD=-15V,ID=-1A | 27 | nC | ||
| Gate-Source Charge | Qgs | VGS=-4.5V,RGEN=6Ω | 6 | nC | ||
| Gate-Drain Charge | Qg | 7 | nC | |||
| Turn-On Delay Time | td(on) | 10 | ns | |||
| Turn-On Rise Time | tr | 15 | ns | |||
| Turn-Off Delay Time | td(off) | 110 | ns | |||
| Turn-Off Fall Time | tf | 70 | ns | |||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Body Diode Current | IS | -10 | A | |||
| Body Diode Voltage | VSD | ISD=-10A, VGS=0V | -0.87 | -0.99 | V | |
| Reverse Recovery Time | trr | TJ=25°C, IF=-10A,di/dt=100A/µs | 23 | 33 | ns | |
| Reverse Recovery Charge | Qrr | 12 | 20 | nC | ||
| Forward Turn-On Time | ton | VDS=-15V,VGS=-4.5V,ID=-10A | nC | |||
Dimensions (DFN3030)
| DIM | INCHES | MM |
|---|---|---|
| A | 0.069 - 0.118 | 1.75 - 3.00 |
| B | 0.026 - 0.023 | 0.65 - 0.575 |
| C | 0.118 - 0.126 | 3.00 - 3.20 |
| D | 0.093 | 2.35 |
| E | 0.028 - 0.035 | 0.70 - 0.90 |
| F | 0.000 - 0.002 | 0.00 - 0.05 |
| G | 0.004 - 0.010 | 0.10 - 0.25 |
| H | 0.012 - 0.020 | 0.30 - 0.50 |
| J | 0.009 - 0.014 | 0.24 - 0.35 |
| K | TYP. | TYP. |
| L | TYP. | TYP. |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| MCG10P03 | Tape&Reel: 3Kpcs/Reel | MCG10P03-TP |
2101051034_MCC-MCG10P03-TP_C712279.pdf
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