Split Gate Trench MOSFET MCC MCAC100N08Y-TP with RoHS compliant lead free finish and UL 94 V0 rating
Key Attributes
Model Number:
MCAC100N08Y-TP
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
57pF@40V
Number:
1 N-channel
Pd - Power Dissipation:
152W
Input Capacitance(Ciss):
5.492nF@40V
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
MCAC100N08Y-TP
Package:
DFN5060
Product Description
Product Overview
This high-density Split Gate Trench MOSFET, designed with an excellent package for heat dissipation, offers low RDS(ON) and is built using advanced cell design. It is a Halogen-free "Green" device, meeting UL 94 V-0 flammability rating, and is lead-free and RoHS compliant. Suitable for various applications, this MOSFET is engineered for reliable performance and efficient thermal management.
Product Attributes
- Brand: MCCSEMI
- Technology: Split Gate Trench MOSFET
- Moisture Sensitivity Level: 1
- Flammability Rating: UL 94 V-0
- Environmental Compliance: Halogen Free "Green" Device, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance Junction to Ambient | RJA | (Note 2) | 40.7 | C/W | ||
| Thermal Resistance Junction to Case | RJC | 0.82 | C/W | |||
| Drain-Source Voltage | VDS | 400 | V | |||
| Gate-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | TC=25 | 100 | A | ||
| Continuous Drain Current | ID | TC=100 | 80 | A | ||
| Pulsed Drain Current | IDM | (Note 3) | 600 | A | ||
| Total Power Dissipation | PD | (Note 4) | 152 | W | ||
| Single Pulsed Avalanche Energy | EAS | (Note 5) | 600 | mJ | ||
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 80 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=80V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 3.6 | 4.5 | m | |
| Gate Resistance | Rg | f=1 MHz, Open drain | 2 | |||
| Diode Characteristics | ||||||
| Continuous Body Diode Current | IS | 100 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=20A | 0.8 | 1.2 | V | |
| Dynamic Characteristics | ||||||
| Reverse Recovery Time | trr | IF=50A, dIF/dt=100A/s | 55 | ns | ||
| Reverse Recovery Charge | Qrr | 75 | nC | |||
| Input Capacitance | Ciss | VDS=40V,VGS=0V,f=1MHz | 5492 | pF | ||
| Output Capacitance | Coss | 834 | pF | |||
| Reverse Transfer Capacitance | Crss | 57 | pF | |||
| Total Gate Charge | Qg | VDD=40V, VGS=10V, RGEN=3, IDS=50A | 75 | nC | ||
| Gate-Source Charge | Qgs | 25 | nC | |||
| Gate-Drain Charge | Qgd | 15 | nC | |||
| Turn-On Delay Time | td(on) | 20 | ns | |||
| Turn-On Rise Time | tr | 41 | ns | |||
| Turn-Off Delay Time | td(off) | 41 | ns | |||
| Turn-Off Fall Time | tf | 18.6 | ns | |||
| Dimensions (DFN5060) | ||||||
| Dimension | Inches | MM | ||||
| A | 0.031 - 0.047 | 0.80 - 1.20 | ||||
| B | 0.193 - 0.222 | 4.90 - 5.64 | ||||
| C | 0.232 - 0.250 | 5.90 - 6.35 | ||||
| D | 0.148 - 0.167 | 3.75 - 4.25 | ||||
| E | 0.126 - 0.154 | 3.20 - 3.92 | ||||
| F | 0.189 - 0.213 | 4.80 - 5.40 | ||||
| G | 0.222 - 0.239 | 5.65 - 6.06 | ||||
| H | 0.045 - 0.059 | 1.15 - 1.50 | ||||
| K | 0.012 - 0.020 | 0.30 - 0.50 | ||||
| J | 0.046 - 0.054 | 1.17 - 1.37 | ||||
| L | 0.012 - 0.028 | 0.30 - 0.71 | ||||
| M | 0.016 - 0.028 | 0.40 - 0.71 | ||||
| N | 0.010 TYP. | 0.254 TYP. | ||||
| Part Number | Packing | Tape&Reel (5Kpcs/Reel) |
|---|---|---|
| *** | ***-TP |
2404031225_MCC-MCAC100N08Y-TP_C3288281.pdf
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