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quality MCC SI2310 TP Power MOSFET N Channel Type with Lead Free Finish and UL 94 V0 Flammability Compliance factory
quality MCC SI2310 TP Power MOSFET N Channel Type with Lead Free Finish and UL 94 V0 Flammability Compliance factory

MCC SI2310 TP Power MOSFET N Channel Type with Lead Free Finish and UL 94 V0 Flammability Compliance

Key Attributes
Model Number: SI2310-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
105mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
19.5pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
247pF@30V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
SI2310-TP
Package:
SOT-23
Product Description

Product Overview

The SI2310 is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features lead-free, RoHS compliant construction and meets UL 94 V-0 flammability rating. The device exhibits excellent thermal performance with a maximum operating junction temperature of +150C and a low thermal resistance. It is suitable for applications requiring efficient power handling and switching capabilities.

Product Attributes

  • Brand: MCCSEMI
  • Model: SI2310
  • Package: SOT-23
  • Compliance: Lead Free Finish/RoHS Compliant
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Halogen Free: Available upon request by adding suffix "-HF"

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Total Power Dissipation PD 1.2 W
Drain Current ID 3.0 A
Pulsed Drain Current (Note1) IDM 10 A
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance Junction to Ambient (Note 2) Surface mounted on FR4 board, t10s 105 C/W
Electrical Characteristics @ 25C (Unless Otherwise Specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 60 V
Zero Gate Voltage Drain Current IDSS VDS =60V, VGS =0V 1 A
Gate-Source Leakage Current IGSS VDS =0V, VGS =20V 100 nA
Gate-Threshold Voltage (Note 3) VGS(th) VDS=VGS, ID=250A 0.5 2.0 V
Drain-Source On-Resistance (Note 3) RDS(on) VGS=10V, ID=3A 105 m
Drain-Source On-Resistance (Note 3) RDS(on) VGS=4.5V, ID=3A 125 m
Diode Forward Voltage (Note 3) VSD VGS=0V, IS=3A 1.2 V
Forward Tranconductance (Note 3) gFS VDS=15V, ID =2A 1.4 S
Dynamic Characteristics (Note 4)
Input Capacitance Ciss VDS=30V,VGS=0V,f =1MHz 247 pF
Output Capacitance Coss VDS=30V,VGS=0V,f =1MHz 34 pF
Reverse Transfer Capacitance Crss VDS=30V,VGS=0V,f =1MHz 19.5 pF
Total Gate Charge Qg VDS=30V,VGS=4.5V,ID=3A 6 nC
Gate-Source Charge Qgs VDS=30V,VGS=4.5V,ID=3A 1 nC
Gate-Drain Charge Qg VDS=30V,VGS=4.5V,ID=3A 1.3 nC
Switching Characteristics (Note 4)
Turn-On Delay Time td(on) VGS=10V,VDD=30V,ID=1.5A, RGEN=1 6 ns
Turn-On Rise Time tr VGS=10V,VDD=30V,ID=1.5A, RGEN=1 15 ns
Turn-Off Delay Time td(off) VGS=10V,VDD=30V,ID=1.5A, RGEN=1 15 ns
Turn-Off Fall Time tf VGS=10V,VDD=30V,ID=1.5A, RGEN=1 10 ns
DIM INCHES MM
A 0.079 2.000 0.031 0.800
B 0.035 0.900 0.037 0.950
C 0.037 0.950 0.035 0.900
D 0.110 2.80 0.120 3.04
E 0.083 2.10 0.104 2.64
F 0.047 1.20 0.055 1.40
G 0.034 0.85 0.041 1.05
H 0.067 1.70 0.083 2.10
J 0.018 0.45 0.024 0.60
K 0.0004 0.01 0.006 0.15
L 0.035 0.90 0.043 1.10
L 0.003 0.08 0.007 0.18
L 0.012 0.30 0.020 0.51
L 0.020 0.50 0.007 0.20

Ordering Information:

Device Packing Part Number
SI2310 Tape&Reel: 3Kpcs/Reel -TP
Note: Adding "-HF" Suffix For Halogen Free, eg. Part Number-TP-HF

2410010204_MCC-SI2310-TP_C669000.pdf

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