Silicon P Channel Power MOSFET Minos MPG40P10P for power switching in adapter charger applications
Key Attributes
Model Number:
MPG40P10P
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
RDS(on):
32mΩ@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
-
Output Capacitance(Coss):
190pF
Input Capacitance(Ciss):
2.315nF
Pd - Power Dissipation:
180W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MPG40P10P
Package:
TO-220
Product Description
Product Overview
The MPG40P10P is a Silicon P-Channel Power MOSFET utilizing advanced technology and design for excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos (implied from contact info)
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-to-Source Breakdown Voltage | VDS | VGS =0V, ID=-250A | -100 | V | ||
| Static Drain-to-Source on-Resistance | RDS(on) | VGS =-10V, ID=-15A | 26 | 32 | m | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1.0 | -2.0 | -3.0 | V |
| Drain to Source leakage Current | IDSS | VDS=-110V, VGS = 0V | -1.0 | A | ||
| Gated Body Foward Leakage | IGSS(F) | VGS= +20V | 100 | nA | ||
| Gated Body Reverse Leakage | IGSS(R) | VGS = -20V | -100 | nA | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, f=1.0MHZ | 2315 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V, f=1.0MHZ | 190 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, f=1.0MHZ | 11 | pF | ||
| Turn-on Delay Time | td(on) | VDD=-20V,ID=-16A, RG=10 | 28 | nS | ||
| Turn-on Rise Time | tr | VDD=-20V,ID=-16A, RG=10 | 21 | nS | ||
| Turn-off Delay Time | td(off) | VDD=-20V,ID=-16A, RG=10 | 62 | nS | ||
| Turn-off Fall Time | tf | VDD=-20V,ID=-16A, RG=10 | 32 | nS | ||
| Total Gate Charge | Qg | VDS=-20V ID=-16A VGS=-10V | 40 | nC | ||
| Gate-Source Charge | Qgs | VDS=-20V ID=-16A VGS=-10V | 9.2 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-20V ID=-16A VGS=-10V | 14 | nC | ||
| S-D Current(Body Diode) | ISD | -40 | A | |||
| Pulsed S-D Current(Body Diode) | ISDM | -140 | A | |||
| Diode Forward Voltage | VSD | VGS =0V, IDS=-35A | -1.5 | V | ||
| Reverse Recovery Time | trr | TJ=25,IF=-35A di/dt=100A/us | 555 | nS | ||
| Reverse Recovery Charge | Qrr | TJ=25,IF=-35A di/dt=100A/us | 4550 | C | ||
| Junction-to-Case Thermal Resistance | RJC | 2.5 | /W |
| Parameter | Symbol | Value | Units |
| Drain-to-Source Breakdown Voltage | VDSS | -100 | V |
| Drain Current (continuous) at Tc=25 | ID | -40 | A |
| Drain Current (pulsed) | IDM | -120 | A |
| Gate to Source Voltage | VGS | +/-20 | V |
| Total Dissipation at Tc=25 | Ptot | 180 | W |
| Max. Operating Junction Temperature | Tj Max. | 175 | |
| Single Pulse Avalanche Energy | EAS | 700 | mJ |
2410122013_Minos-MPG40P10P_C22389983.pdf
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