Double Trench N channel Power MOSFET Minos MPT012N08-T with Improved Switching Performance and Low RDS
Key Attributes
Model Number:
MPT012N08-T
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
413A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
500pF
Number:
1 N-channel
Output Capacitance(Coss):
3.6nF
Pd - Power Dissipation:
462.9W
Input Capacitance(Ciss):
12.6nF
Gate Charge(Qg):
230nC@10V
Mfr. Part #:
MPT012N08-T
Package:
TOLL-8L
Product Description
Product Overview
The MPT012N08-T is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy, making it ideal for Battery Management Systems (BMS) and high current switching applications.
Product Attributes
- Brand: MNS
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Description |
| VDSS | 80 | V | Drain-Source Voltage |
| ID | 360 | A | Continuous Drain Current, Package Limited |
| RDS(on).typ | 1.1 | m | Drain-Source On-Resistance (Typical) |
| EAS | 1764 | mJ | Avalanche Energy |
| PD | 462.9 | W | Power Dissipation |
| TJ, Tstg | -55 to 150 | Operating Junction and Storage Temperature Range | |
| RJC | 0.27 | /W | Thermal resistance, Junction-Case |
| RJA | 62.5 | /W | Thermal resistance, Junction-Ambient |
| VGS(th) | 2-4 | V | Gate Threshold Voltage |
| Ciss | 12600 | pF | Input Capacitance |
| Coss | 3600 | pF | Output Capacitance |
| Crss | 500 | pF | Reverse Transfer Capacitance |
| Qg | 230 | nC | Total Gate Charge |
| VSD | 1.2 | V | Diode Forward Voltage |
| Trr | 72 | ns | Reverse Recovery Time |
| Qrr | 120 | nC | Reverse Recovery Charge |
| td(on) | 41 | ns | Turn-On Delay Time |
| tr | 51 | ns | Rise Time |
| td(off) | 110 | ns | Turn-Off Delay Time |
| tf | 55 | ns | Fall Time |
2409302201_Minos-MPT012N08-T_C22390007.pdf
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