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quality MCC SI3400A TP N Channel Enhancement Mode MOSFET with High Pulsed Drain Current and UL 94 V 0 Rating factory
quality MCC SI3400A TP N Channel Enhancement Mode MOSFET with High Pulsed Drain Current and UL 94 V 0 Rating factory

MCC SI3400A TP N Channel Enhancement Mode MOSFET with High Pulsed Drain Current and UL 94 V 0 Rating

Key Attributes
Model Number: SI3400A-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
32mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)):
1.4V
Number:
1 N-channel
Input Capacitance(Ciss):
1.155nF@15V
Pd - Power Dissipation:
400mW
Mfr. Part #:
SI3400A-TP
Package:
SOT-23
Product Description

Product Overview

The SI3400A is an N-Channel Enhancement Mode Field Effect Transistor designed with a high-density cell structure for extremely low RDS(ON) and exceptional on-resistance and DC current capability. It features a high breakdown voltage and is suitable for various applications requiring efficient power handling. The device is available in a SOT-23 package and meets UL 94 V-0 flammability rating. A halogen-free option is available.

Product Attributes

  • Brand: Micro Commercial Components (MCC)
  • Package: SOT-23
  • Certifications: Epoxy meets UL 94 V-0 flammability rating, Moisture Sensitivity Level 1
  • Availability: Halogen free available upon request by adding suffix "-HF"

Technical Specifications

Parameter Symbol Rating Unit Test Condition Min Typ Max
Maximum Ratings
Drain-source Voltage VDS 30 V Unless Otherwise Specified @ 25C
Continuous Drain Current ID 5.8 A
Pulsed Drain Current (note 1) IDM 30 A
Gate-source Voltage VGS 12 V
Total Power Dissipation PD 0.40 W
Thermal Resistance Junction to Ambient RJA 313 /W
Operating Junction Temperature TJ -55 to +150
Storage Temperature TSTG -55 to +150
Electrical Characteristics
Drain-source breakdown voltage V(BR)DSS 30 V VGS = 0V, ID =250A
Zero gate voltage drain current IDSS 1 A VDS =24V,VGS = 0V
Gate-source leakage current IGSS 100 nA VGS =12V, VDS = 0V
Drain-source on-resistance RDS(on) 29 m VGS =10V, ID =5.8A 32
Drain-source on-resistance RDS(on) 32 m VGS =4.5V, ID =5A 38
Drain-source on-resistance RDS(on) 40 m VGS =2.5V,ID=4A 45
Forward tranconductance gFS 8 S VDS =5V, ID =5A
Gate threshold voltage VGS(th) 0.7 V VDS =VGS, ID =250A 1.4
Dynamic Characteristics (note 4,5)
Input capacitance Ciss pF VDS =15V,VGS =0V,f =1MHz 1155
Output capacitance Coss pF VDS =15V,VGS =0V,f =1MHz 108
Reverse transfer capacitance Crss pF VDS =15V,VGS =0V,f =1MHz 84
Gate resistance Rg 3.6 DS V =0V,VGS =0V,f =1MHz
Switching Characteristics (note 4,5)
Turn-on delay time td(on) ns VGS=10V,VDS=15V, RL=2.7,RGEN=3 5
Turn-on rise time tr ns VGS=10V,VDS=15V, RL=2.7,RGEN=3 7
Turn-off delay time td(off) ns VGS=10V,VDS=15V, RL=2.7,RGEN=3 40
Turn-off fall time tf ns VGS=10V,VDS=15V, RL=2.7,RGEN=3 6
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3) SD 1 V SI =1A,VGS=0V
Dimensions (SOT-23)
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
B .083 .104 2.10 2.64
Device Packing
Part Number Packing Type Quantity
***-TP Tape&Reel 3Kpcs/Reel
***-TP-HF Tape&Reel (Halogen Free) 3Kpcs/Reel

Notes:

  • 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
  • 2. Surface Mounted on FR4 Board, t < 5 sec.
  • 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
  • 4. Guaranteed by design, not subject to production testing.
  • 5. Refer to characteristic curves for detailed information.

2410121800_MCC-SI3400A-TP_C194254.pdf

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