N channel Enhanced Power MOSFET Minos MPT042N10S with Low Conduction Losses and High Avalanche Energy
Key Attributes
Model Number:
MPT042N10S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
174pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
7.102nF@50V
Pd - Power Dissipation:
227.2W
Gate Charge(Qg):
102nC@10V
Mfr. Part #:
MPT042N10S
Package:
TO-263
Product Description
Product Overview
The MPT042N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for motor drivers and high-speed switching applications.
Product Attributes
- Brand: MNS (implied by www.mns-kx.com)
- Certifications: RoHS product
Technical Specifications
| Ordering Code | Package | VDS (V) | RDS(on) @ VGS=10V (m) | ID @ TC=25C (A) | EAS (mJ) | PD (W) |
| MPT042N10-P | TO-220 | 100 | 4.2 (Typ: 3.5) | 120 (Package Limited) | 306 | 227.2 |
| MPT042N10-S | TO-263 | 100 | 4.2 (Typ: 3.5) | 120 (Package Limited) | 306 | 227.2 |
2410122024_Minos-MPT042N10S_C5352765.pdf
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