Lead Free RoHS Compliant MCC 2N7002W-TP Trench MV MOSFET with Low Gate Threshold Voltage Technology

Key Attributes
Model Number: 2N7002W-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
2.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.2pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
25.2pF@25V
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
1.1nC@10V
Mfr. Part #:
2N7002W-TP
Package:
SOT-323
Product Description

Product Overview

This Trench MV MOSFET technology offers a low gate threshold voltage, making it suitable for various applications. It is designed with Moisture Sensitivity Level 1 and is Halogen Free, qualifying as a Green Device. The product meets UL 94 V-0 flammability rating and is Lead Free/RoHS Compliant. It operates within a junction temperature range of -55C to +150C and has a low thermal resistance of 625C/W Junction to Ambient.

Product Attributes

  • Brand: MCC SEMI
  • Technology: Trench MV MOSFET
  • Moisture Sensitivity Level: 1
  • Environmental: Halogen Free. Green Device
  • Flammability Rating: UL 94 V-0
  • Compliance: Lead Free Finish/RoHS Compliant
  • Suffix for RoHS Compliance: "P"

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10A 60 V
Gate-Source Leakage Current IGSS VDS=0V, VGS=20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1.0 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 1.2 1.3 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=300mA 1.2
Forward Transconductance gfs VDS =5V, ID =115mA 300 mS
Continuous Body Diode Current IS 115 mA
Diode Forward Voltage VSD VGS=0V, IS=115mA 1.1 1.2 V
Reverse Recovery Time trr IF=0.3A, dIF/dt=100A/s 3 ns
Reverse Recovery Charge Qrr 2 nC
Input Capacitance Ciss VDS=25V,VGS=0V,f=1MHz 25.2 pF
Output Capacitance Coss 11 pF
Reverse Transfer Capacitance Crss 3.3 pF
Total Gate Charge Qg VDD=30V, VGS=10V, RG=6, IDS=300mA 115 nC
Gate-Source Charge Qgs 11 nC
Gate-Drain Charge Qg d 3.5 nC
Turn-On Delay Time td(on) 2.2 ns
Turn-On Rise Time tr 1.1 ns
Turn-Off Delay Time td(off) 0.19 ns
Turn-Off Fall Time tf 0.25 ns
Gate Resistance Rg F=1 MHz, Open drain 6
Maximum Ratings: Drain-Source Voltage VDS 60 V
Maximum Ratings: Gate-Source Voltage VGS 20 V
Maximum Ratings: Continuous Drain Current ID TA=25C 200 mA
Maximum Ratings: Continuous Drain Current ID TA=100C 115 mA
Maximum Ratings: Pulsed Drain Current IDM (Note3) 460 mA
Maximum Ratings: Total Power Dissipation PD (Note4) 73 mW
Maximum Ratings: Operating Junction Temperature Range -55 150 C
Maximum Ratings: Storage Temperature -55 150 C
Maximum Ratings: Thermal Resistance RJA Junction to Ambient (Note2) 625 C/W

Dimensions (SOT-323)

DIM INCHES MM NOTE
A 0.071 - 0.087 1.80 - 2.20
B 0.083 - 0.096 2.10 - 2.45
C 0.045 - 0.053 1.15 - 1.35
D 0.047 - 0.055 1.20 - 1.40
E 0.012 - 0.016 0.30 - 0.40
F 0.000 - 0.004 0.00 - 0.10
G 0.035 - 0.044 0.90 - 1.10
H 0.002 - 0.010 0.05 - 0.25
J 0.006 - 0.016 0.15 - 0.40
K 0.026 0.65 TYP.
L 0.010 - 0.018 0.26 - 0.46

Notes:

  1. Halogen free Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  2. The value of RJA is measured with the device mounted on the minimum recommended pad size, in a still air environment with TA =25C.
  3. Repetitive rating; pulse width limited by max. junction temperature.
  4. PD is based on max. junction temperature, using junction to ambient thermal resistance.

Ordering Information

Device Packing: Part Number-TP Tape&Reel: 3Kpcs/Reel


2504101957_MCC-2N7002W-TP_C3290108.pdf

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