Power MOSFET Minos IRF830 Silicon N Channel Device with Low On Resistance and High Voltage Capability
Key Attributes
Model Number:
IRF830
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.25Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
3.3V
Reverse Transfer Capacitance (Crss@Vds):
13pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
657pF@25V
Pd - Power Dissipation:
38W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
IRF830
Package:
TO-220
Product Description
Product Overview
The IRF830 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching, adapters, and chargers, offering low ON resistance and low reverse transfer capacitances. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: mns-kx.com
- Package: TO-220
- Origin: Shenzhen Minos (implied by contact information)
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDS (Drain-to-Source Breakdown Voltage) | 500 | V | |||
| ID (Drain Current, continuous) | Tc=25 | 5 | A | ||
| IDM (Drain Current, pulsed) | 20 | A | |||
| VGS (Gate to Source Voltage) | +/-30 | V | |||
| Ptot (Total Dissipation) | Tc=25 | 38 | W | ||
| Tj Max. (Operating Junction Temperature) | -55 | 150 | |||
| EAS (Single Pulse Avalanche Energy) | 88 | mJ | |||
| Electrical Parameters | |||||
| VDS (Drain-source Voltage) | VGS =0V, ID=250A | 500 | V | ||
| RDS(on) (Static Drain-to-Source on-Resistance) | VGS =10V, ID=2.5A | 1.25 | 1.50 | ||
| VGS(th) (Gate Threshold Voltage) | VDS=VGS, ID=250A | 2.0 | 3.3 | 4.0 | V |
| IDSS (Drain to Source leakage Current) | VDS=500V, VGS = 0V | 1.0 | A | ||
| IGSS(F) (Gate Body Forward Leakage) | VGS = +30V | 100 | nA | ||
| IGSS(R) (Gate Body Reverse Leakage) | VGS = -30V | -100 | nA | ||
| Ciss (Input Capacitance) | VGS =0V, VDS=25V, f=1.0MHZ | 657 | pF | ||
| Coss (Output Capacitance) | 57 | pF | |||
| Crss (Reverse Transfer Capacitance) | 13 | pF | |||
| Switching Characteristics | |||||
| td(off) (Turn-on Delay Time) | VDD=250V,ID=5A, RG=25 | 20 | nS | ||
| Qg (Total Gate Charge) | VDS=400V ID=5A VGS=10V | 26 | nC | ||
| Qgs (Gate-Source Charge) | 4 | nC | |||
| Qgd (Gate-Drain Charge) | 15 | nC | |||
| Source-Drain Diode Characteristics | |||||
| ISD (S-D Current) | 5 | A | |||
| trr (Reverse Recovery Time) | TJ=25,IF=5A di/dt=100A/us | 220 | nS | ||
| Qrr (Reverse Recovery Charge) | 1 | C | |||
2410122013_Minos-IRF830_C7587853.pdf
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