MDD Microdiode Semiconductor S9015 SOT23 PNP Transistor for Switching and Amplification Applications
Key Attributes
Model Number:
S9015
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9015
Package:
SOT-23
Product Description
S9015 Transistor (PNP)
The S9015 is a PNP bipolar junction transistor (BJT) housed in a SOT-23 package. It is designed for general-purpose amplification and switching applications. Its complementary type is the S9014 NPN transistor.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
- Transistor Type: PNP
- Complementary To: S9014
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | -50 | V | |||
| Collector-Emitter Voltage | VCEO | -45 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current-Continuous | IC | -100 | mA | |||
| Collector Power Dissipation | PC | (Ta=25) | 200 | mW | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA,IB=0 | -45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-50V, IE=0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -0.1 | A | ||
| DC current gain | hFE | VCE=-5V, IC=-1mA | 200 | 1000 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-100mA, IB=-10mA | -0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-100mA, IB=-10mA | -1 | V | ||
| Transition frequency | fT | VCE=-5V, IC=-10mA, f=30MHz | 150 | MHz | ||
| Thermal Resistance From Junction To Ambient | RJA | 625 | /W | |||
hFE Classification
| Rank | Range |
|---|---|
| L | 200-450 |
| H | 400-1000 |
2411211946_MDD-Microdiode-Semiconductor-S9015_C2858497.pdf
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